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1064 documents found for International Journal
15 GHz quadrature voltage controlled oscillator in 130 nm CMOS technology
Paolo Lucchi, Davide Dermit, Gilles Jacquemod, Jean Baptiste Begueret, Mattia Borgarino
Published online : 01-12-2011
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This paper reports a 15 GHz quadrature voltage controlled oscillator (QVCO) designed in a 130 nm CMOS technology. The phase noise performance of the QVCO and of a phase locked loop (PLL) where the QVCO was inserted were compared with the literature and with telecom standards and commercial products for broadcast satellite applications.
Low-cost dichroic mirrors for future Deep Space ground stations
Marco Pasian, Maurizio Bozzi, Luca Perregrini
Published online : 01-12-2011
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Future Deep Space (DS) ground stations envisioned by running projects funded by major space agencies are based on arrays of reflector antennas operating in different frequency bands. Therefore, a multi-band feeding system is required for each antenna, and a possible solution foresees the use of dichroic mirrors to separate/combine different beams. This paper presents a low-cost and fast manufactur
A planar compact dual-band bandpass filter using stepped impedance resonator and interdigital capacitor
Pankaj Sarkar, Rowdra Ghatak, Manimala Pal, Dipak Ranjan Poddar
Published online : 01-12-2011
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In this paper a dual-band bandpass filter with sharp rejection is proposed. The filter is realized by using two half-wavelength stepped impedance resonators to operate at the passbands 2.5 and 3.5 GHz. To increase the band width further to about 45 MHz at the lower passband and 115 MHz at the higher passband, interdigital capacitors are introduced between resonator and input and output combining n
EuMA special issue on RF-MEMS
Fabio Coccetti, Alexandru Muller, John Papapolymerou, Volker Ziegler
Published online : 01-10-2011
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MRF volume 3 issue 5 Cover and Back matter
Published online : 01-10-2011
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MRF volume 3 issue 5 Cover and Front matter
Published online : 01-10-2011
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SiGe heterojunction bipolar phototransistor for optics?microwaves interfacing
Pierre Lecoy, Bruno Delacressonniere, Daniel Pasquet
Published online : 01-12-2011
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A new SiGe heterojunction bipolar phototransistor (HPT) based on a commercially available process was designed, realized, and experimentally characterized. Its internal characteristics, mainly the collector-to-base capacitance, vary significantly with the received light power, making it suitable as an active element of a light-controlled photo-oscillator. It can also be a key component of optical
Genetic algorithm for optimization of L-shaped PIFA antennas
Trong Duc Nguyen, Yvan Duroc, Van Yem Vu, Tan Phu Vuong
Published online : 01-11-2011
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Two new designs of the L-shaped Planar Inverted?F Antenna (PIFA) antennas with single and dual polarization operating at the frequency band for IEEE 802.11b/g standard with satisfactory radiation characteristics are presented. We further propose a genetic algorithm (GA) embedded in CST Microwave Studio for optimizing these antenna parameters. The agreement of simulation and measurement results sho
Electromagnetic dosimetry for adult and child models within a car: multi-exposure scenarios
Louis-Ray Harris, Maxim Zhadobov, Nacer Chahat, Ronan Sauleau
Published online : 01-11-2011
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This paper deals with the numerical dosimetry for adult and children models exposed to CW signals of several wireless communication systems (UMTS, WiMax, and Bluetooth) within a partly shielded environment represented by a realistic car model. More than 20 mono- and multi-source exposure scenarios are considered. Computational results demonstrate that, for all considered exposure scenarios, the sp
MRF volume 3 issue 6 Cover and Front matter
Published online : 01-11-2011
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MRF volume 3 issue 6 Cover and Back matter
Published online : 01-11-2011
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AlGaN/GaN epitaxy and technology
Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Michael Dammann, Rudolf Kiefer, Wilfried Pletschen, Stefan Müller, Rolf Aidam, Hanspeter Menner, Lutz Kirste, Klaus Köhler, Michael Mikulla, Oliver Ambacher
Published online : 01-02-2010
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We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1?6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 1
Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Stéphane Piotrowicz, Erwan Morvan, Raphaël Aubry, Guillaume Callet, Eric Chartier, Christian Dua, Jérémy Dufraisse, Didier Floriot, Jean-Claude Jacquet, Olivier Jardel, Yves Mancuso, Benoit Mallet-Guy, Mourad Oualli, Zineb Ouarch, Marie-Antoinette Di-Forte Poisson, Nicolas Sarazin, Michel Stanislawiak, Sylvain Delage
Published online : 01-02-2010
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The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 ?m gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power
Industrial GaN FET technology
Hervé Blanck, James R. Thorpe, Reza Behtash, Jörg Splettstößer, Peter Brückner, Sylvain Heckmann, Helmut Jung, Klaus Riepe, Franck Bourgeois, Michael Hosch, Dominik Köhn, Hermann Stieglauer, Didier Floriot, Benoît Lambert, Laurent Favede, Zineb Ouarch, Marc Camiade
Published online : 01-02-2010
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GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III?V technology and the intensive support and collaboration with partners and E
GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project
Tibault Reveyrand, Walter Ciccognani, Giovanni Ghione, Olivier Jardel, Ernesto Limiti, Antonio Serino, Vittorio Camarchia, Federica Cappelluti, Raymond Quéré
Published online : 01-02-2010
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The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (?Key Organisation for Research in Integrated Circuits in GaN technology?). The KorriGaN project (2005?09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear
Reliability issues of Gallium Nitride High Electron Mobility Transistors
Gaudenzio Meneghesso, Matteo Meneghini, Augusto Tazzoli, Nicolo' Ronchi, Antonio Stocco, Alessandro Chini, Enrico Zanoni
Published online : 01-02-2010
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In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and
Large-signal modeling of large-size GaN HEMTs with a comprehensive extrinsic elements extraction algorithm
J. Alberto Zamudio-Flores, Samir Dahmani, Günter Kompa
Published online : 01-02-2010
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This work presents a measurement-based physics-oriented large-signal modeling technique for GaN HEMTs. All the model elements are derived directly from pulsed-DC measurements and bias dependent small-signal model elements. The proposed small-signal model features a 12-element extrinsic network, which allows proper modeling of the complex parasitic effects present in large gate-width devices. A rel
Evaluation of GaN technology in Doherty power amplifier architectures
Paolo Colantonio, Franco Giannini, Rocco Giofrè, Luca Piazzon
Published online : 01-02-2010
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The aim of the present paper is to highlight the possible benefits coming from the use of the GaN high electron-mobility transistor (HEMT) technology in the Doherty power amplifier (DPA) architecture. In particular, the attention is focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. A deep discussion of the DPA's design guidelines is also presented
Dual frequency coaxial rotary joint with multi-stepped transition
Soumyabrata Chakrabarty, Vijay Kumar Singh, Shashi Bhusan Sharma
Published online : 01-04-2010
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The present paper presents the design and development of a dual-channel microwave rotary joint using coaxial waveguide as primary waveguide and rectangular waveguide as the secondary waveguide. Design is presented at 5.85?7.02 GHz with 20% bandwidth and at 14?14.5 GHz bands with 3.6% bandwidth using dual channel mode transducers exciting transverse electromagnetic (TEM) mode in the coaxial wavegui
Pointing enhancement techniques for deep-space antennas
Piermario Besso, Maurizio Bozzi, Marco Formaggi, Luca Perregrini
Published online : 01-04-2010
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The present paper presents a very efficient technique for enhancing the pointing accuracy in beam-waveguide (BWG) antennas and its application to the deep space antenna DSA2 of the European Space Agency. The proposed technique permits to achieve a twofold result: on the one hand, it provides a solution to the beam aberration issue, arising when the antenna simultaneously receives from and transmit
Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation
Antonio Augusto Lisboa de Souza, Emmanuel Dupouy, Jean-Christophe Nallatamby, Michel Prigent, Juan Obregon
Published online : 01-04-2010
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This paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and si
GaN-based amplifiers for wideband applications
Patrick Schuh, Hardy Sledzik, Rolf Reber, Kristina Widmer, Martin Oppermann, Markus Mußer, Matthias Seelmann-Eggebert, Rudolf Kiefer
Published online : 01-02-2010
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Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electroni
Millimeter-wave GaN-based HEMT development at ETH-Zürich
Haifeng Sun, Diego Marti, Stefano Tirelli, Andreas R. Alt, Hansruedi Benedickter, C.R. Bolognesi
Published online : 01-02-2010
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We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 n
Exact determination of electrical properties of wurtzite AlInN/(AlN)/GaN heterostructures (0.07 ?  ? 0.21) by means of a detailed charge balance equation
Marcus Gonschorek, Jean-Francois Carlin, Eric Feltin, Marcel Py, Nicolas Grandjean
Published online : 01-02-2010
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This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance?voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transistor (HEMT) devices with several remarkable records: densities of the 2D electron gas (2DEG) of 2.6 × 10 cm for lattice-matched (LM) heterostructures an
Preface
Rüdiger Quay, Sylvain Delage
Published online : 01-02-2010
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