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1355 documents found for International Journal
Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET
Jan Kuzmik, Sergey Bychikhin, Emmanuelle Pichonat, Christophe Gaquière, Erwan Morvan, Erhard Kohn, Jean-Pierre Teyssier, Dionyz Pogany
Published online : 01-04-2009
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In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient interferometric mapping (TIM), provides a fundamental understanding of the heat propagation in a transi
IJMWT special issue on the European Microwave Week 2008
Peter Hoogeboom, Dominique Schreurs
Published online : 01-08-2009
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MRF volume 1 issue 3 Cover and Back matter
Published online : 01-06-2009
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MRF volume 1 issue 3 Cover and Front matter
Published online : 01-06-2009
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On the losses in substrate-integrated waveguides and cavities
Maurizio Bozzi, Marco Pasian, Luca Perregrini, Ke Wu
Published online : 01-10-2009
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This paper presents a study of losses in substrate-integrated waveguides (SIWs) and cavities. Three mechanisms of losses are considered and separately investigated, namely radiation leakage, ohmic loss, and dielectric loss. A systematic comparison of waveguides with different geometry, operating at different frequencies, is reported. This study permits to give a physical interpretation of the loss
MRF volume 1 issue 4 Cover and Back matter
Published online : 01-08-2009
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MRF volume 1 issue 4 Cover and Front matter
Published online : 01-08-2009
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A compact semi-lumped tunable complex-impedance transformer
Anne-Laure Perrier, Jean-Marc Duchamp, Olivier Exshaw, Robert Harrison, Philippe Ferrari
Published online : 01-10-2009
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This article describes the design and performance of a compact tunable impedance transformer. The structure is based on a transmission line loaded by varactor diodes. Using only two pairs of diodes, the circuit is very small with a total length of only /10. Both the frequency range and the load impedance can be tuned by varying the varactor bias voltages. Our design provides a tunable operating fr
Analysis and design of an efficient, fully integrated 1?8 GHz traveling wave power amplifier in 180 nm CMOS
Joerg Carls, Frank Ellinger, Yulin Zhang, Udo Joerges, Silvan Wehrli
Published online : 01-10-2009
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Traveling wave amplifiers (TWAs) offer the advantage of broadband amplification and a closed set of equations that allow deriving the RF gain by means of treating TWAs as discrete transmission line approximations. Up to now, however, the significant losses associated with CMOS integrated inductors have been neglected. This work presents a new approach for determining the transmission line losses a
High permeability and high permittivity heterostructures for the miniaturization of Radiofrequency components
Evangéline Bènevent, Kevin Garello, Dominique Cros, Bernard Viala
Published online : 01-12-2009
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This paper discusses on the miniaturization of radiofrequency (RF) front-end components such as half-wavelength resonators based on new magneto-dielectric heterostructures combining high permeability (µ = 150?250) and high permittivity (? = 18?150). Size reduction is evaluated by means of 2-cm-long coplanar waveguides realized with silicon technology and having a resonance frequency of about 3 GHz
Multi-access antenna for an opportunistic radio mobile communication of fourth generation
Walid El Hajj, François Gallée, Christian Person
Published online : 01-12-2009
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A new model of two-access reconfigurable antennas for future mobile communication systems is presented in this article. This structure is based on a slot antenna with two separated access ports, isolated and matched at 1 and 2 GHz, respectively. The novelty of this element lies in the fact that first a filtering structure is integrated in the antenna, and then any additional switching or frequency
Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance
Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline
Published online : 01-12-2009
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This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupli
Characterization of a loaded high impedance surface
Fabrice Linot, Xavier Begaud, Michel Soiron, Christian Renard, Michèle Labeyrie
Published online : 01-12-2009
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A high impedance surface (HIS) consisting of metallic square patches electrically connected one to each other with resistors is shown. Tunability of the absorption factor is achieved by the resistor value. The absorbing band of the loaded HIS is determined by the phase of the signal reflected by this structure. The main contribution of the paper is to demonstrate the absorption behavior over a wid
Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm
Marc D. Rosales, François Duport, Julien Schiellein, Jean-Luc Polleux, Catherine Algani, Christian Rumelhard
Published online : 01-12-2009
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This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses o
Implementation of electrothermal system-level model for RF power amplifiers in Scilab/Scicos environment
Florent Besombes, Raphaël Sommet, Julie Mazeau, Edouard Ngoya, Jean-Paul Martinaud
Published online : 01-12-2009
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This paper presents a behavioral electrothermal model implementation for high RF power amplifiers dedicated to the simulation of radar application in the Scilab/Scicos environment. This model, based on the direct coupling between a behavioral electrical model and a physics-based reduced thermal model, allows to predict nonlinear effects, high-frequency memory effects, and thermal effects due to th
Label-free RF biosensors for human cell dielectric spectroscopy
Claire Dalmay, Arnaud Pothier, Mathilde Cheray, Fabrice Lalloue, Marie-Odile Jauberteau, Pierre Blondy
Published online : 01-12-2009
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This paper presents an original biosensor chip allowing determination of intrinsic relative permittivity of biological cells at microwave frequencies. This sensor permits non-invasive cell identification and discrimination using an RF signal to probe intracellular medium of biological samples. Indeed, these sensors use an RF planar resonator that allows detection capabilities on less than 10 cells
Optically modulated III?V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency
Moumita Mukherjee, Sitesh Kumar Roy
Published online : 01-10-2009
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Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III?V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an effic
On-chip spiral inductor in flip-chip technology
Gye-An Lee, Darioush Agahi, Franco De Flaviis
Published online : 01-10-2009
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Performance comparison is made between on-chip spiral inductor in flip-chip versus wirebond package technology. Full-wave electromagnetic simulation and on-strip measurement techniques were used to study the performance fluctuations of inductor within flip-chip environment. Results show that the performance of a flipped silicon-based spiral inductor is affected by the radio frequency (RF) current
Blocker filtering low-noise amplifier for SAW-less Bluetooth receiver system
Heesong Seo, Hyejeong Song, Changjoon Park, Jehyung Yoon, Inyoung Choi, Bumman Kim
Published online : 01-10-2009
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A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth? application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from
Optimization of circular antenna arrays of isotropic radiators using simulated annealing
Munish Rattan, M.S. Patterh, B.S. Sohi
Published online : 01-10-2009
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This paper presents the design optimization of circular antenna arrays of isotropic radiators using simulated annealing. The problem has been formulated to achieve a desired value of sidelobe level and a minimum possible value of beamwidth. This is accomplished by jointly optimizing the excitation amplitude and spacing between elements. Simulation examples have been given and comparison has been c
Measurement of the density of magnetized fusion plasma using microwave reflectometry
Jean-Claude Giacalone, Roland Sabot, Frédéric Clairet, Christine Bottereau, Diego Molina
Published online : 01-12-2009
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About 25 years have elapsed since the first measurement by a FW-CW (called fast sweeping) reflectometer of the electronic density in magnetized fusion plasma. Substituting tube sources with solid-state components has resulted in a decrease of the sweeping time from the millisecond to the microsecond range. Based on voltage control oscillators and on active frequency multipliers, four profile refle
A 40 Gbps electro-absorption modulator integrated laser modeling method for optical transmitter in ultra-wide band radio-over-fiber systems
Frédérique Deshours, Anne-Laure Billabert, Catherine Algani, Fabrice Blache, Christian Rumelhard, Georges Alquié
Published online : 01-12-2009
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The great interest of optical fiber links in communicating systems especially in ultra-wide band (UWB) communications has grown up in the last decade and requires co-simulation for mixed circuits design exploiting both optical and microwave domains. In this paper, we report an original modeling method of an electro-absorption modulator associated with a distributed-feedback laser to simulate an op
Negative index from asymmetric metallic cut wire pairs metamaterials
Shah Nawaz Burokur, André de Lustrac
Published online : 01-12-2009
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Metamaterials made of exclusively metallic cut wire pairs have been experimentally demonstrated to exhibit a negative refractive index at optical frequencies. However, other related works on slightly different wire and plate pairs have not shown a negative index. In this paper, we present the analogy between previously reported S-shaped metamaterials and asymmetric cut wire pairs by a simple unify
SIP antenna on 0.13 µm SiGe technology at 79 GHz for SRR automotive radar
Yenny Pinto, Christian Person, Daniel Gloria, Andreia Cathelin, Didier Belot, Sébastien Pruvost, Robert Plana
Published online : 01-12-2009
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This paper describes the analysis and the design of an integrated antenna on 0.13 µm SiGe BICMOS technology. A non-resonant dipole antenna integrated on SiGe is electromagnetically coupled to a radiating element reported on a printed circuit board (PCB) substrate. This integrated solution, also compatible with system in package (SIP) concept, provides significant improvements with respect to direc
An RF spectrometer for fast wide band measurement
Simon Hemour, Florence Podevin, Pascal Xavier
Published online : 01-12-2009
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A new type of spectrum analyzer using RF interferometry is presented. The stationary wave integrated Fourier transform spectrometer is dedicated to the measurement of transient wideband signals. The spectrometer is mobile and cheap. It consists of spatial samplers placed along a waveguide ended by a short circuit. The standing wave caused by the short circuit is sampled and the spectrum is obtaine
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