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1461 documents found for International Journal
A subharmonic front-end in SiGe:C technology for 94-GHz imaging arrays
Erik Öjefors, Johannes Borngräber, Falk Korndörfer, Ullrich Pfeiffer
Published online : 01-08-2009
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The design of a subharmonic downconverter for 94-GHz imaging arrays in SiGe:C technology is presented. A three-stage differential low-noise amplifier (LNA) with lumped matching networks is used together with a subharmonic mixer driven by a single-pole local-oscillator poly-phase network to form the front-end. The LNA yields 15 dB gain at 94 GHz, while the mixer provides 5 dB conversion gain over a
X-band T/R-module front-end based on GaN MMICs
Patrick Schuh, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, Friedbert van Raay, Matthias Seelmann-Eggebert, Rudolf Kiefer, Michael Mikulla
Published online : 01-08-2009
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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel v
50 GHz S-shaped rat-race balun with 1.4 dB insertion loss in a wafer-level chip-size package process
Ahmet Oncu, Chiaki Inui, Yasuo Manzawa, Minoru Fujishima
Published online : 01-08-2009
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In millimeter-wave CMOS circuits, a balun is useful for connecting off-chip single-end devices and on-chip differential circuits to improve noise immunity. However, an on-chip balun occupies a large chip area. To reduce the chip area required for the on-chip balun, a new rat-race balun using a rewiring technology with a wafer-level chip-size package (W-CSP) is proposed. The W-CSP balun occupies no
Integrated on-chip antennas for communication on and between monolithic integrated circuits
Hristomir Yordanov, Peter Russer
Published online : 01-08-2009
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The rate of signal transmission on or between monolithic integrated circuits is limited by the cross-talk and the dispersion due to the wired interconnects. The bandwidth limitations can be overcome by wireless chip-to-chip and on-chip interconnects via integrated antennas. In this work the utilization of the electronic circuit ground planes as radiating elements for the integrated antennas has be
An L-band SiGe HBT differential amplifier with frequency and rejection-level tunable, multiple stopband
Masaki Shirata, Toshio Shinohara, Minoru Sato, Yasushi Itoh
Published online : 01-08-2009
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An L-band frequency and rejection-level tunable SiGe HBT differential amplifier with dual stopband is presented. To achieve frequency and rejection-level tunable performance, dual LCR-tank circuit with an active load is incorporated into the design of the series feedback loops of the differential amplifier. The active load consists of a varactor diode represented as a variable and a common-emitte
A double H-shaped resonator and its use as an isotropic ENG metamaterial
Michal Blaha, Jan Machac, Martin Rytir
Published online : 01-08-2009
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This paper presents a new planar particle that shows negative effective permittivity under irradiation by an electromagnetic wave. The mutual coupling between the couples of these particles is studied in particular. The response of this particle sensitive to an electric field is strongly anisotropic. The particle is aimed to be used to compose an isotropic epsilon-negative metamaterial in two form
Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET
Jan Kuzmik, Sergey Bychikhin, Emmanuelle Pichonat, Christophe Gaquière, Erwan Morvan, Erhard Kohn, Jean-Pierre Teyssier, Dionyz Pogany
Published online : 01-04-2009
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In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient interferometric mapping (TIM), provides a fundamental understanding of the heat propagation in a transi
IJMWT special issue on the European Microwave Week 2008
Peter Hoogeboom, Dominique Schreurs
Published online : 01-08-2009
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MRF volume 1 issue 3 Cover and Back matter
Published online : 01-06-2009
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MRF volume 1 issue 3 Cover and Front matter
Published online : 01-06-2009
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On the losses in substrate-integrated waveguides and cavities
Maurizio Bozzi, Marco Pasian, Luca Perregrini, Ke Wu
Published online : 01-10-2009
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This paper presents a study of losses in substrate-integrated waveguides (SIWs) and cavities. Three mechanisms of losses are considered and separately investigated, namely radiation leakage, ohmic loss, and dielectric loss. A systematic comparison of waveguides with different geometry, operating at different frequencies, is reported. This study permits to give a physical interpretation of the loss
MRF volume 1 issue 4 Cover and Back matter
Published online : 01-08-2009
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MRF volume 1 issue 4 Cover and Front matter
Published online : 01-08-2009
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A compact semi-lumped tunable complex-impedance transformer
Anne-Laure Perrier, Jean-Marc Duchamp, Olivier Exshaw, Robert Harrison, Philippe Ferrari
Published online : 01-10-2009
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This article describes the design and performance of a compact tunable impedance transformer. The structure is based on a transmission line loaded by varactor diodes. Using only two pairs of diodes, the circuit is very small with a total length of only /10. Both the frequency range and the load impedance can be tuned by varying the varactor bias voltages. Our design provides a tunable operating fr
Analysis and design of an efficient, fully integrated 1?8 GHz traveling wave power amplifier in 180 nm CMOS
Joerg Carls, Frank Ellinger, Yulin Zhang, Udo Joerges, Silvan Wehrli
Published online : 01-10-2009
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Traveling wave amplifiers (TWAs) offer the advantage of broadband amplification and a closed set of equations that allow deriving the RF gain by means of treating TWAs as discrete transmission line approximations. Up to now, however, the significant losses associated with CMOS integrated inductors have been neglected. This work presents a new approach for determining the transmission line losses a
High permeability and high permittivity heterostructures for the miniaturization of Radiofrequency components
Evangéline Bènevent, Kevin Garello, Dominique Cros, Bernard Viala
Published online : 01-12-2009
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This paper discusses on the miniaturization of radiofrequency (RF) front-end components such as half-wavelength resonators based on new magneto-dielectric heterostructures combining high permeability (µ = 150?250) and high permittivity (? = 18?150). Size reduction is evaluated by means of 2-cm-long coplanar waveguides realized with silicon technology and having a resonance frequency of about 3 GHz
Multi-access antenna for an opportunistic radio mobile communication of fourth generation
Walid El Hajj, François Gallée, Christian Person
Published online : 01-12-2009
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A new model of two-access reconfigurable antennas for future mobile communication systems is presented in this article. This structure is based on a slot antenna with two separated access ports, isolated and matched at 1 and 2 GHz, respectively. The novelty of this element lies in the fact that first a filtering structure is integrated in the antenna, and then any additional switching or frequency
Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance
Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline
Published online : 01-12-2009
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This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupli
Characterization of a loaded high impedance surface
Fabrice Linot, Xavier Begaud, Michel Soiron, Christian Renard, Michèle Labeyrie
Published online : 01-12-2009
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A high impedance surface (HIS) consisting of metallic square patches electrically connected one to each other with resistors is shown. Tunability of the absorption factor is achieved by the resistor value. The absorbing band of the loaded HIS is determined by the phase of the signal reflected by this structure. The main contribution of the paper is to demonstrate the absorption behavior over a wid
Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm
Marc D. Rosales, François Duport, Julien Schiellein, Jean-Luc Polleux, Catherine Algani, Christian Rumelhard
Published online : 01-12-2009
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This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses o
Implementation of electrothermal system-level model for RF power amplifiers in Scilab/Scicos environment
Florent Besombes, Raphaël Sommet, Julie Mazeau, Edouard Ngoya, Jean-Paul Martinaud
Published online : 01-12-2009
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This paper presents a behavioral electrothermal model implementation for high RF power amplifiers dedicated to the simulation of radar application in the Scilab/Scicos environment. This model, based on the direct coupling between a behavioral electrical model and a physics-based reduced thermal model, allows to predict nonlinear effects, high-frequency memory effects, and thermal effects due to th
Label-free RF biosensors for human cell dielectric spectroscopy
Claire Dalmay, Arnaud Pothier, Mathilde Cheray, Fabrice Lalloue, Marie-Odile Jauberteau, Pierre Blondy
Published online : 01-12-2009
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This paper presents an original biosensor chip allowing determination of intrinsic relative permittivity of biological cells at microwave frequencies. This sensor permits non-invasive cell identification and discrimination using an RF signal to probe intracellular medium of biological samples. Indeed, these sensors use an RF planar resonator that allows detection capabilities on less than 10 cells
Optically modulated III?V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency
Moumita Mukherjee, Sitesh Kumar Roy
Published online : 01-10-2009
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Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III?V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an effic
On-chip spiral inductor in flip-chip technology
Gye-An Lee, Darioush Agahi, Franco De Flaviis
Published online : 01-10-2009
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Performance comparison is made between on-chip spiral inductor in flip-chip versus wirebond package technology. Full-wave electromagnetic simulation and on-strip measurement techniques were used to study the performance fluctuations of inductor within flip-chip environment. Results show that the performance of a flipped silicon-based spiral inductor is affected by the radio frequency (RF) current
Blocker filtering low-noise amplifier for SAW-less Bluetooth receiver system
Heesong Seo, Hyejeong Song, Changjoon Park, Jehyung Yoon, Inyoung Choi, Bumman Kim
Published online : 01-10-2009
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A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth? application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from
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