In this paper, it is proposed to use a cylindrical cell for the characterization of dielectric material. The extraction of complex permittivity is based on inverse gradient approach where the full-wave simulation results are mapped to experimental data to extract the complex permittivity. As the operational frequency of radio frequency (RF)/microwave devices is increased, it becomes difficult to a

The design of agile active antennas requires an efficient modeling methodology in order to quantify the impact of other components on the array radiation pattern, and especially the influence of power amplifiers (PA). Therefore, the performance prediction of PA on TX chains is of prime importance. This article describes two different approaches for active antenna applications. The first one concen

Millimeter-wave phase shifters are important components for a wide scope of applications. An analog-type phase shifter for W-band has been designed, analyzed, fabricated, and measured. The phase shifter consists of a reconfigurable high-impedance surface (HIS) controlled by micro-electromechanical system (MEMS) varactors and placed adjacent to a silicon dielectric rod waveguide. The analog-type ph

This paper presents an overview on novel microwave micro-electromechanical systems (MEMS) device concepts developed in our research group during the last 5 years, which are specifically designed for addressing some fundamental problems for reliable device operation and robustness to process parameter variation. In contrast to conventional solutions, the presented device concepts are targeted at el

This paper reports a 15 GHz quadrature voltage controlled oscillator (QVCO) designed in a 130 nm CMOS technology. The phase noise performance of the QVCO and of a phase locked loop (PLL) where the QVCO was inserted were compared with the literature and with telecom standards and commercial products for broadcast satellite applications.

Future Deep Space (DS) ground stations envisioned by running projects funded by major space agencies are based on arrays of reflector antennas operating in different frequency bands. Therefore, a multi-band feeding system is required for each antenna, and a possible solution foresees the use of dichroic mirrors to separate/combine different beams. This paper presents a low-cost and fast manufactur

In this paper a dual-band bandpass filter with sharp rejection is proposed. The filter is realized by using two half-wavelength stepped impedance resonators to operate at the passbands 2.5 and 3.5 GHz. To increase the band width further to about 45 MHz at the lower passband and 115 MHz at the higher passband, interdigital capacitors are introduced between resonator and input and output combining n

A new SiGe heterojunction bipolar phototransistor (HPT) based on a commercially available process was designed, realized, and experimentally characterized. Its internal characteristics, mainly the collector-to-base capacitance, vary significantly with the received light power, making it suitable as an active element of a light-controlled photo-oscillator. It can also be a key component of optical

Two new designs of the L-shaped Planar Inverted?F Antenna (PIFA) antennas with single and dual polarization operating at the frequency band for IEEE 802.11b/g standard with satisfactory radiation characteristics are presented. We further propose a genetic algorithm (GA) embedded in CST Microwave Studio for optimizing these antenna parameters. The agreement of simulation and measurement results sho

This paper deals with the numerical dosimetry for adult and children models exposed to CW signals of several wireless communication systems (UMTS, WiMax, and Bluetooth) within a partly shielded environment represented by a realistic car model. More than 20 mono- and multi-source exposure scenarios are considered. Computational results demonstrate that, for all considered exposure scenarios, the sp

We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1?6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 1

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 ?m gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power

GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III?V technology and the intensive support and collaboration with partners and E

The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (?Key Organisation for Research in Integrated Circuits in GaN technology?). The KorriGaN project (2005?09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and

This work presents a measurement-based physics-oriented large-signal modeling technique for GaN HEMTs. All the model elements are derived directly from pulsed-DC measurements and bias dependent small-signal model elements. The proposed small-signal model features a 12-element extrinsic network, which allows proper modeling of the complex parasitic effects present in large gate-width devices. A rel

The aim of the present paper is to highlight the possible benefits coming from the use of the GaN high electron-mobility transistor (HEMT) technology in the Doherty power amplifier (DPA) architecture. In particular, the attention is focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. A deep discussion of the DPA's design guidelines is also presented

The present paper presents the design and development of a dual-channel microwave rotary joint using coaxial waveguide as primary waveguide and rectangular waveguide as the secondary waveguide. Design is presented at 5.85?7.02 GHz with 20% bandwidth and at 14?14.5 GHz bands with 3.6% bandwidth using dual channel mode transducers exciting transverse electromagnetic (TEM) mode in the coaxial wavegui

The present paper presents a very efficient technique for enhancing the pointing accuracy in beam-waveguide (BWG) antennas and its application to the deep space antenna DSA2 of the European Space Agency. The proposed technique permits to achieve a twofold result: on the one hand, it provides a solution to the beam aberration issue, arising when the antenna simultaneously receives from and transmit

This paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and si