Proceedings of the 7th European Radar Conference 3-D Calibration of InISAR Imaging under a Condition of Phase Ambiguity LIU Cheng-lan, HE Feng, GAO Xun-zhang College of Electronic Science and Engineering National University of Defense Technology Changsha 410073, China cl_liu2005-yahoo.com.cn Abstract - Interferometric inverse synthetic aperture radar (InISAR) imaging is a recently developed power

Proceedings of the 7th European Radar Conference An Extended NLCS Algorithm for Bistatic fixed-Receiver SAR Imaging Qilei Zhang, Wenge Chang, Xiangyang Li School of Electronic Science and Engineering, NUDT, changsha, 410073, China plazhangql-163.com changwenge-nudt.edu.cn Abstract--Imaging of Bistatic fixed-receiver SAR which is azimuth-dependent, is rather different from monostatic SAR, because

Proceedings of the 7th European Radar Conference SAR-MTI Improvement Using A-Priori Knowledge of the Road Network Paulo Marques Instituto de Telecomunicações Instituto Superior de Engenharia de Lisboa Portugal pmarques-isel.pt Abstract-- This paper focuses on the SAR-MTI processor improvement by using a priori knowledge of the road networks. The proposed technique is fit for civil applications w

Proceedings of the 5th European Microwave Integrated Circuits Conference TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's M. Al-Sa'di1, V. d'Alessandro2, S. Fregonese1, S.-M. Hong3, C. Jungemann3, C. Maneux1, I. Marano2, A. Pakfar4, N. Rinaldi2*, G. Sasso2, M. Schröter5,6, A. Sibaja-Hernandez7, C. Tavernier4, and G. Wedel5 IMS, Bordeaux, France DIBET Dept

Proceedings of the 5th European Microwave Integrated Circuits Conference Modeling and Parameter Extraction of SiGe:C HBT's with HICUM for the Emerging Terahertz Era B. Ardouin#1, C. Raya#2, M. Schroter*$3, A. Pawlak*4, D. Céli%5, F. Pourchon%6, K. Aufinger+7, T. F. Meister+8, T. Zimmer§9 # XMOD Technologies, Bordeaux, France 1 ardouin-xmodtech.com 2 raya-xmodtech.com * $ CEDIC, University of

Proceedings of the 5th European Microwave Integrated Circuits Conference Pushing Conventional SiGe HBT Technology Towards "Dotfive" Terahertz Alain Chantre#1, Pascal Chevalier#, Thomas Lacave#*, Grégory Avenier#, Michel Buczko#, Yves Campidelli#, Linda Depoyan#, Ludovic Berthier#, and Christophe Gacquière* STMicroelectronics 850 rue Jean Monnet, F-38926 Crolles, France 1 # alain.chantre-st.com

Proceedings of the 5th European Microwave Integrated Circuits Conference Advances in Millimeter-wave and Sub-millimeterwave Devices and Circuits, Si to III-Vs H. Alfred Hung Army Research Laboratory 2800 Powder Mill Road, Adelphi, MD 20783, USA hahung-alum.mit.edu Abstract-- This paper addresses the recent advances in InP-, GaN-, and Si/SiGe-based devices, monolithic integrated circuits, and subs

Proceedings of the 5th European Microwave Integrated Circuits Conference A Novel GaN-Based High Frequency Varactor Diode Chong Jin 1*, Dimitris Pavlidis 2, Laurence Considine Department of High Frequency Electronics, Technische Universität Darmstadt Merckstrasse 25, 64283, Darmstadt, Germany 2 jin-hfe.tu-darmstadt.de pavlidis-hfe.tu-darmstadt.de 1 * On leave from State Key Laboratory of Elect

Proceedings of the 5th European Microwave Integrated Circuits Conference Development of Wafer-Scale Graphene RF Electronics J. S. Moon1, D. Curtis1, M. Hu1, D. Wong1, C. McGuire1, P. M. Campbell2, G. Jernigan2, J. Tedesco2, B. VanMil2, R. Myers-Ward2, C. Eddy, Jr. 2, and D. K. Gaskill2, J. Robinson3, M. Fanton3, and P. Asbeck4 HRL Laboratories, LLC 3011 Malibu Canyon Road, Malibu, CA 9026, U.S.A.

Proceedings of the 5th European Microwave Integrated Circuits Conference 79GHz BiCMOS Single-Ended and Differential Power Amplifiers Nejdat Demirel1,2, Eric Kerhervé2, Robert Plana3 and Denis Pache1 2 STMicroelectronics, R&D, 38920 Crolles, France IMS, University of Bordeaux, 33405 Talence, France 3 LAAS, University of Toulouse, 31077 Toulouse nejdat.demirel-ims-bordeaux.fr 1 Abstract -- This