Proceedings of the 4th European Microwave Integrated Circuits Conference A 200 GHz Active Heterodyne Receiver MMIC With Low Sub-Harmonic LO Power Requirements for Imaging Frontends I. Kallfass#1 , A. Tessmann#, H. Massler# , A. Leuther# , M. Schlechtweg#, O. Ambacher# # Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany 1 ingmar.kallfass-iaf.fr

Proceedings of the 4th European Microwave Integrated Circuits Conference GaN MMIC Amplifiers for W-band Transceivers Satoshi Masuda#1, Toshihiro Ohki#, Kozo Makiyama#, Masahito Kanamura#, Naoya Okamoto#, Hisao Shigematsu#, Kenji Imanishi#, Toshihide Kikkawa#, Kazukiyo Joshin#, Naoki Hara* # Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan #1 masuda01-jp.fujitsu.com *

Proceedings of the 4th European Microwave Integrated Circuits Conference A Simplified Switch-Based GaN HEMT Model for RF Switch-Mode Amplifiers A. Wentzel, F. Schnieder, C. Meliani, and W. Heinrich Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin / Germany andreas.wentzel-fbh-berlin.de Abstract -- A simplified switch-based model is proposed for GaNHEMTs, which is suitable fo

Proceedings of the 4th European Microwave Integrated Circuits Conference Sub-nanosecond Greater-Than-10V Compact Pulse Amplifier for Ultra-Wideband Application Renfeng Jin#1, Subrata Halder+2, James C.M. Hwang#3, Choi L. Law*4 # Department of Electrical and Computer Engineering, Lehigh University Bethlehem, PA 18015, United States 1 rej205-lehigh.edu 3 jh00-lehigh.edu + Anadigics Inc. 141 Moun

Proceedings of the 4th European Microwave Integrated Circuits Conference Pulsed Operation and Performance of Commercial GaN HEMTs F. Fornetti#1, K.A. Morris#2, M.A. Beach#3 # Centre for Communications Research, University of Bristol, MVB, Woodland Rd, BS8 1UB, Bristol, UK 2 F.Fornetti-bris.ac.uk Kevin.Morris-bris.ac.uk 3 M.A.Beach-bris.ac.uk 1 Abstract-- The present study investigates the beh

Proceedings of the 4th European Microwave Integrated Circuits Conference A 60-GHz Double-Balanced Homodyne DownConverter in 65-nm CMOS Process Pooyan Sakian#1, Reza Mahmoudi#2, Paul van Zeijl*3, Maarten Lont#4 and Arthur van Roermund#5 # Eindhoven University of Technology Eindhoven, the Netherlands. 1 p.sakian.dezfuli-tue.nl 2 r.mahmoudi-tue.nl 4 m.lont-tue.nl 5 a.h.m.v.roermund-tue.nl Philips

Proceedings of the 4th European Microwave Integrated Circuits Conference A 57-63 GHz Quadrature VCO in CMOS 65 nm Pooyan Sakian#1, Edwin v. d. Heijden*2, Hammad M. Cheema#3, Reza Mahmoudi#4, Arthur van Roermund #5 # Eindhoven University of Technology Eindhoven, the Netherlands. 1 p.sakian.dezfuli-tue.nl 3 h.m.cheema-tue.nl 4 r.mahmoudi-tue.nl 5 a.h.m.v.roermund-tue.nl NXP Research High-Tech Ca

Proceedings of the 4th European Microwave Integrated Circuits Conference Broadband AlGaN/GaN High Power Amplifiers, Robust LNAs, and Power Switches in L-Band S. Piotrowicz *1, B. Mallet-Guy #2, E. Chartier *, J.C. Jacquet *, O. Jardel *, D. Lancereau *, G. Le Coustre *, E. Morvan *, R. Aubry *, C. Dua *, M. Oualli *, M. Richard *, N. Sarazin *, M.A. diForte-Poisson *, J. Delaire #, Y. Mancuso #,

Proceedings of the 4th European Microwave Integrated Circuits Conference 200W Discrete GaN HEMT Power Device In a 7x7mm CMC Package Aram Mkhitarian , Vincent Ngo, Florian Baltac, and Huoping Xin MACOM Technology Solutions, Power Hybrids Operation, Torrance, CA 90501, USA 1 1 aram.mkhitarian-macomtech.com Abstract-- This paper presents the development of high power AlGaN/GaN HEMTs on GaN/SiC ep

Proceedings of the 4th European Microwave Integrated Circuits Conference A High Frequency Low Phase-Noise Signal Source Generated Using a Self-Oscillating Mixer Mingquan Bao and Yinggang Li Microwave and High Speed Electronics Research Centre, Ericsson Research, Ericsson AB Flöjelbergsgatan 2a, 43184, Mölndal, Sweden mingquan.bao-ericsson.com yinggang.li-ericsson.com Abstract--A 21GHz signal sour