RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent increase. In this paper, we report the linearity trade-offs associated with varying the T-gate geometries of AlGaN/GaN HEMTs on Si, specifically the gate extensions which serve as field plates and their impact on the large-sign