Proceedings of the 3rd European Microwave Integrated Circuits Conference Global Digital-Analog Co-Simulation Methodology for Power and Signal Integrity aware Design and Analysis Sidina Wane and Guillaume Boguszewski NXP-Semiconductors, 2, Esplanade Anton Philips, Campus EffiScience, Colombelles BP 2000, 14906 CAEN Cedex 9 France Email Contact: Sidina.Wane-ieee.org Abstract -- In this paper a glob

Proceedings of the 3rd European Microwave Integrated Circuits Conference Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations Peter Abele#1, Michael Schäfer*2, Jörg Splettstößer#3, Martin Thinnes#4, Hermann Stieglauer#5, Dag Behammer#6 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany 1 # abele-ums-ulm.

Proceedings of the 3rd European Microwave Integrated Circuits Conference 20 GHz Power Amplifier Design in 130 nm CMOS Mattias Ferndahl #1 , Ted Johansson , and Herbert Zirath # # Chalmers University of Technology, Department of Micro Technology and Nano Science, Microwave Electr. Lab., SE-412 96 G¨ teborg, Sweden o 1 mattias.ferndahl-chalmers.se Infineon Technologies Nordic AB SE-164 81 Kista

Proceedings of the 3rd European Microwave Integrated Circuits Conference Advanced Components for Applications in S-Band and X-Band Radars Timothy Boles Tyco Electronics ­ Wireless Systems Segment 100 Chelmsford St., Lowell, Massachusetts, 01851, USA bolest-tycoelectronics.com Abstract-- Performance issues in S-Band and X-Band radar applications, have been investigated in parallel paths. The first

Proceedings of the 3rd European Microwave Integrated Circuits Conference Technology Features and Design Tools for mm-wave Applications in CMOS John J. Pekarik IBM Semiconductor Research and Development Center rue Jean Monnet, 38926 Crolles Cedex, France pekarik-us.ibm.com Abstract--Leading-edge CMOS provides transistor performance that, by traditional measures, is more than adequate for implement

Proceedings of the 3rd European Microwave Integrated Circuits Conference Increased reliability of AlGaN/GaN HEMTs versus temperature using deuterium. G. Astre#1, J.G. Tartarin#2, J. Chevallier+3, S. Delage°4. # University of Toulouse, LAAS CNRS & Paul Sabatier University, 7 av. Colonel Roche, 31.077 Toulouse cedex 4, France 2 gastre-laas.fr tartarin-laas.fr 1 + GEMaC, 1 place Aristide Briand

Proceedings of the 3rd European Microwave Integrated Circuits Conference Perspectives of (sub-) 32nm CMOS for Analog/RF and mm-wave Applications M. Dehan1 , B. Parvais1, A. Mercha1, V. Subramanian2, G. Groeseneken1,2, W. Sansen* and S. Decoutere1 IMEC Kapeldreef 75, Leuven, Belgium * K.U.Leuven, Department ESAT-INSYS, 3001, Leuven, Belgium 1 1 morin.dehan-imec.be Abstract-- New process modules

Proceedings of the 3rd European Microwave Integrated Circuits Conference Impact of Si substrate resistivity on the non-linear behaviour of RF CPW transmission lines C. Roda Neve1, D. Lederer2, G. Pailloncy3, D.C. Kerr4, J.M. Gering4, T.G. McKay5, M.S. Carroll5 and J.-P. Raskin1 1 Microwave Laboratory, Université catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve, Belgium cesar.ro

Proceedings of the 3rd European Microwave Integrated Circuits Conference Robust Packaged Diode Modelling with a TableBased Approach A. Rodríguez-Testera, O. Mojón, M. Fernández-Barciela and E. Sánchez # Dpto. Teoría de la Señal y Comunicaciones, Universidad de Vigo ETSI Telecomunicación, c/ Maxwell 36310 Vigo, Spain Abstract-- A table-based nonlinear approach was used to predict the performance

Proceedings of the 3rd European Microwave Integrated Circuits Conference InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications Edward Yi Chang1, Chien-I Kuo1, Heng-Tung Hsu2, Chia-Yuan Chang1 1 Department of Materials Science and Engineering, National Chiao-Tung University 1 edc-mail.nctu.edu.tw 2 Department of Communications Engineering, Yuan Ze Uni