Proceedings of the 17th European Microwave Integrated Circuits Conference 46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS Tsuyoshi Sugiura1,2, Toshihiko Yoshimasu1,3 1 The School of Fundamental Science and Engineering, Waseda University, Japan 2 Anritsu Corporation, Japan 3 The Graduate School of Information Producti

Proceedings of the 17th European Microwave Integrated Circuits Conference A D-band, High Switching Speed, Differential Reflection-Type Phase Shifter in 250-nm InP HBT Jeff Shih-Chieh Chien??James F . Buckwalter Department of Electrical and Computer Engineering, University of California, Santa Barbara, USA {schien, buckwalter}-ucsb.edu Abstract ? A high switching speed differential reflection-type

Proceedings of the 17th European Microwave Integrated Circuits Conference A 67 GHz 23 mW Receiver Utilizing Complementary Current Reuse Techniques Jesse Moody, Stefan Lepkowski, Travis Forbes Sandia National Labs, USA jmoody-sandia.gov Abstract ? This paper presents a very low power, low noise receiver operating at V-band which is enabled by the application of ultra-low power RF design techniques

Proceedings of the 17th European Microwave Integrated Circuits Conference A third order analogue pre-distorter MMIC for Eband PA linearisation M. Gavell#1, G. Granström#2, C. Fager*3 # Gotmic AB, Sweden Chalmers University of Technology, Sweden * {1marcus.gavell, 2goran.granstrom}-gotmic.se, 3christian.fager-chalmers.se improvements of using a GaAs APD for linearizing traveling wave tube ampl

Proceedings of the 17th European Microwave Integrated Circuits Conference A Simple Thermally Activated Trapping Model for AlGaN/GaN HEMTs Lu´?s C. Nunes1 , Jo?ao L. Gomes2 , Filipe M. Barradas3 , Jos´e C. Pedro4 Instituto de Telecomunicac¸o? es DETI, Universidade de Aveiro {1 cotimos, 2 joaolucas, 3 filipebarradas, 4 jcpedro}-ua.pt in the description of the trapping dynamics has been shown to be

Proceedings of the 17th European Microwave Integrated Circuits Conference A 33-37GHz Phase-Aligning Frequency Generator with 3.5? Accuracy and 20ns Switching Time Ruixing He1 , Yahya Tousi2 Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, USA {1 hexx0110, 2 ymtousi}-umn.edu Abstract ? This work presents a mm-wave signal generation method that provides back

Proceedings of the 17th European Microwave Integrated Circuits Conference A Miniature 100V, 130W Multi-Octave UHF GaN on SiC Transistor with Internal Feedback James Custer, Gabriele Formicone, Jeff Burger, John Walker Integra Technologies Inc., El Segundo, USA Abstract? A 100V GaN on SiC transistor measuring just 0.39 x 0.23? is reported that operates over the full 100-500 MHz frequency range wi

Proceedings of the 17th European Microwave Integrated Circuits Conference Differential Coupler Topologies for Built-In Self-Test of SiGe Automotive Radar Transceivers Yannick Wenger#$ , Herman Jalli Ng* , Falk Korndörfer^ , Bernd Meinerzhagen$ , Vadim Issakov$ # Keysight $ Institute Technologies Deutschland GmbH, Germany of CMOS Design, TU Braunschweig, Germany * Hochschule Karlsruhe, Germany ^

Proceedings of the 17th European Microwave Integrated Circuits Conference A Dual-Modulus Frequency Divider up to 128 GHz in SiGe BiCMOS Technology Arzu Ergintav#1 , Frank Herzel#2 , Falk Korndörfer#3 , Thomas Mausolf#4 , Dietmar Kissinger$ , Gunter Fischer#5 # IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany $ Universität Ulm, Institut

Proceedings of the 17th European Microwave Integrated Circuits Conference E-Band Ultra-Low-Noise (4.5 dB) and High-Power (27 dBm) GaN T/R Front-End MMIC Erdin Ture, Fabian Thome, Dirk Schwantuschke, Michael Mikulla, and R¨udiger Quay Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany erdin.ture-iaf.fraunhofer.de II. G A N-HEMT T ECHNOLOGY Abstract ? A hi