5 GHz MMIC Optically Controlled Oscillator Design from Non Linear Modelling of Microstrip PhotoInduced Switching Devices S. Faci1, C. Tripon-Canseliet1, C. Algani1, F. Deshours1, G. Alquié1, S. Formont2 and J. Chazelas2 1 LISIF-UPMC, Case Courier 252 ­ 3, rue Galilée, Ivry sur Seine, Paris 2 Thales Airborne Systems, Elancourt, France L L) Abstract -- Progress in the photoswitching device modelli

Low-Cost Direct 23GHz Transceiver for Wideband Wireless Internet Access Miroslav Peri 1, Branka Jokanovi 1, Predrag Manojlovi 1, Nenad Popovi 1 1 IMTEL Institute, Bulevar Mihaila Pupina 165, 11070 Novi Beograd, Serbia and Montenegro [1]. With significant equipment cost reduction as our main goal, we realized alloutdoor system for 23GHz band based on direct modulation and demodulation [2] and ana

On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs C. Meliani, M. Rudolph, and W. Heinrich Ferdinand-Braun-Institut für Hoechstfrequenztechnik (FBH), 12489 Berlin / Germany Email: meliani-fbh-berlin.de Abstract -- A technique to connect two broadband GaAs HBT TWAs is presented. It covers the full range from DC to high frequency and is suitable for high bitrate (40 Gb/s) transmis

A new non-linear electrothermal 3D spline model with charge integration for power FETs C. Lagarde, J.P. Teyssier, P. Bouysse, R. Quere, C. Charbonniaud, O. Jardel, H. Bousbia IRCOM, CNRS UMR 6615, Université de Limoges IUT GEII, 7 rue Jules Vallès, 19100 Brive, France Abstract -- A new 3D table-based model for microwave field effect transistors is proposed. This non-linear electrothermal model dep

LTCC Triplexer for WiMax Applications Denys Orlenko, Georgiy Sevskiy, Thomas Kerssenbrock and Patric Heide EPCOS AG, Product Development Modules, Anzinger Str. 13, D- 81617 Munich, Germany, e-mail: denys.orlenko-epcos.com, fax +49 89 636-27994, phone +49 89 636-27991 Abstract -- In the present work a design procedure for multiplexer development has been described. This procedure allows to reduce d

A 4.5 GHz 3-4 Dual-Modulus Frequency Divider IC in GaAs Technology M. Detratti1, J. Cabo2 , J.P. Pascual1, A. Herrera1 1 University of Cantabria, DICOM, Avda. Los Castros s/n, 39005, Santander, Spain e-mail: marco.detratti-unican.es, phone: +34 942200918, fax: +34 942202488 2 Alcatel Espacio, c/ Einstein 7, 28760, Tres Cantos, Madrid, Spain broad enough to cover different applications without the

A 45 dB Variable Gain Low Noise MMIC Amplifier M. Anowar Masud*, Herbert Zirath*,#, Matthew Kelly* * Chalmers University of Technology, Microwave Electronics Laboratory, 412 96 Gothenburg, Sweden # Ericsson AB, Microwave and High Speed Research Center, 431 84 Mölndal, Sweden Abstract -- A variable gain amplifier operating at 2.5 GHz based on Single Ended topology has been designed and characterize

Rigorous modal analysis of dielectric loaded resonators and junctions in rectangular waveguide Ferdinando Alessandri 1, Davide Maiarelli 2 Giacomo Martirano 3, Angela Toccaceli 1 1 University of Perugia, Department of Electronics, via G.Duranti 93, 06125 Perugia, Italy, +390755853661 2 Alenia Spazio S.p.A., via Saccomuro, 00131 Roma, Italy, +390641512075 3 Mice, via Pasquali 79, 87040 Cosenza, It

A Ku Band Monolithic Power Amplifier for TT&C Applications C.Florian1-2, R.Cignani2-3, G.Vannini3, M.C.Comparini4 1 University of Bologna, DEIS, Bologna, 40136 Viale Risorgimento 2, Italy, cflorian-deis.unibo.it; 2 MEC s.r.l., Bologna, Viale Pepoli 3/2, Italy, corrado.florian-mec-mmic.com; 3 University of Ferrara, Department of Engineering, Ferrara, 44100 Via Saragat 1, Italy, rcignani-ing.unife.

Design of X-Band planar reflection resonators B. Potelon1, C. Quendo1, E. Rius1, JF. Favennec1, C. Person1, F. Bodereau2, J-C. Cayrou2, JL. Cazaux2 1 LEST-UMR CNRS n°6165, CS 93837- 29238 Brest Cedex 3, France. 2 E-mail : benjamin.potelon-univ-brest.fr, phone : +33.(0)2 98 01 70 79 ALCATEL SPACE, B.P.1187- 31037 Toulouse Cedex 1, France E-mail : Frantz.Bodereau-space.alcatel.fr Abstract ­ This p