Microwave applications of advanced semiconductor technologies R.P. Mertens*, W. De Raedt, G. Carchon, H.A.C. Tilmans and M. Germain IMEC, MCP-division, Kapeldreef 75, 3001 Leuven, Belgium *also ESAT, KULeuven Abstract ­ New semiconductor technologies, used in passive microwave applications, allow the integration of passives with high quality factors and the fabrication of novel RFMEMS components f

Advanced Ground Based Escan Radars Werner Sieprath EADS Deutschland GmbH, Defence Electronics, Woerthstr. 85, D-89077 Ulm, Germany werner.sieprath-sysde.eads.net Abstract -- Electronically Scanned Radars (ESCAN Radars) are key systems elements of ground based military systems being developed for air defence against future threats including tactical ballistic missiles. The radar design is governed

Naval Radar in a Littoral Environment R.V. de Jongh1 1 THALES Nederland B.V., Joint Radar Sensors, Haaksbergerstraat 49, P.O. Box 42, 7550 GD, Hengelo, The Netherlands wind turbines, road traffic and dense concentration of birds have an impact on the radar performance. Large number and variety of targets: littoral environments have more targets, including many neutral targets. Also the variety of

Current Status of Airborne Active Phased Array (AESA) Radar Systems and Future Trends Hans Hommel, Heinz-Peter Feldle EADS Deutschland GmbH, Woerthstrasse 85, 89077 Ulm, Germany Abstract AESA technology reached a mature technology level and is being adopted by advanced radar programmes. T/R modules are the key enabling technology and cost reduction efforts in this field are in progress. For futur

Digital Beam Forming Synthetic Aperture Radar Heer, C1, Shutie P.F2 EADS Astrium, AED432, 88039 FN, Germany EADS Astrium, AED431, 88039 FN, Germany, MIEEE 1 2 Abstract -- This paper provides an overview of two recently completed SAR studies at Astrium together with a summary of the capabilities of the TSX (TerraSAR-X) satellite. The two studies: HRWS (High Resolution Wide Swath radar) and LCMA (

Progress in Phased-Array Radar Applications Joachim H. G. Ender, Helmut Wilden, Ulrich Nickel, Richard Klemm, Andreas R. Brenner, Thomas Eibert, Dirk Nüßler FGAN ­ Forschungsinstitut für Hochfrequenzphysik und Radartechnik (FHR), Neuenahrer Str.20 D-53343 Wachtberg, Germany, Tel: (+49) 228 9435 226, E-mail: ender-fgan Abstract -- During the last decade, a rapid progress of phased-array radar syste

Bottom-up Nanoelectronics Peter Hadley Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands Abstract -- Nanoelectronics is a broad topic that spans molecular devices to silicon field-effect transistors. While the development of nanoscale silicon devices is an important topic, the focus here will be on the challengers to silicon such as molecules, carbon nanotubes

Dielectric Material Impact on Capacitive RF MEMS Reliability T. Lisec, C. Huth and B. Wagner Fraunhofer Institute for Silicon Technology (ISIT), Fraunhoferstr. 1, 25524 Itzehoe, Germany Abstract - The influence of different types of dielectrics on the switching behaviour and reliability of capacitive RF MEMS switches fabricated by metal surfacemicromachining is investigated. Sputtered AlN layers

An Original Methodology to Assess Fatigue Behavior in RF MEMS Devices O. Millet1), P. Bertrand2), B. Legrand2), D. Collard2,3), L. Buchaillot2) DELFMEMS IEMN, Avenue Poincaré, Cité Scientifique, 59652, Villeneuve d'Ascq, France 2) IEMN, Silicon Microsystems Group Institute of Electronic, Microelectronic and Nanotechnologies, UMR CNRS 8520 Dept. ISEN, Avenue Poincaré, Cité Scientifique, 59652, Vill

RF MEMS Sensitivity to Radiations G. J. Papaioannou1, V. Theonas1, M. Exarchos1 and G. Konstantinidis2 University of Athens, Physics Dpt., Solid State Physics Section Panepistimiopolis Zografos, 15784 Athens, Greece, +30 2107276817 2 IESL FORTH, 71110 Heraklion, Greece 1 Abstract -- Silicon dioxide and silicon nitride as well as other insulating materials are used in micro-electromechanical syste