Anisotropic Conductive Adhesives for Millimeterwave Flipchip Interconnections Johann Heyen*, and Arne F. Jacob Institut für Hochfrequenztechnik, Technische Universität Braunschweig P/O 3329, 38023 Braunschweig, Germany Phone: +49-531-391-2002; Fax: +49-531-391-2045; Email: a.jacob-tu-bs.de *) Now with: EPCOS AG, Surface Acoustic Wave Components, Product Development Modules and Special Products, An

A simple High-Data-Rate architecture for Multiple-Access WLAN 60 GHz transceiver based on a LO phase noise cancellation technique C. LOYEZ, M. FRYZIEL, A. BOE, N. ROLLAND, P.A. ROLLAND IEMN / IRCICA UMR CNRS 8520 - DHS - USTL Cité Scientifique - Avenue Poincaré, BP 69 59652 Villeneuve d'Ascq Cedex ­ France E-Mail : Christophe.loyez-iemn-univ-lille1.fr ­ Tel : +33 (0)3 20 19 79 20 ­ Fax : +33 (0)3

A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology Yut-Hoong Chow and Thomas Chong Wireless Semiconductor Division, Agilent Technologies (Malaysia) Bayan Lepas Free Industrial Zone, 11900 Bayan Lepas Penang, Malaysia Tel: 60-4-6430611 Fax: 60-4-6423732 Email: yut-hoong_chow-agilent.com, thomas-ck_chong-agilent.com Abstract -- This paper describes the design

Design and Parameter-Extraction Based Small-Signal Modeling of a Novel Center-Anchor MEMS Series Switch Jaewoo Lee, Woo-Seok Yang, Sungweon Kang, and Chang-Auck Choi Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea Tel: +82-42-860-1656, Fax: +82-42-860-5608, E-mail: jaewoo-etri.re.kr Abstract -- A novel c

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Design Data for Hot-via Interconnects in Chip Scale Packaged MMICs up to 110 GHz Alexandre Bessemoulin, Senior Member, IEEE United Monolithic Semiconductors, route départementale 128 ­ BP46, 91401 Orsay Cedex, France email: alexandre.bessemoulin-ieee.org ­ Ph. (+33) 1.69.33.05.46 ­ Fax. (+33) 1.69.33.05.52 Abstract-- Theoretical and experimental design data for the modeling of bump- to hot-via int

Coplanar W-Band Low Noise Amplifier MMIC Using 100-nm Gate-length GaAs PHEMTs A. Bessemoulin1, Senior Member, IEEE, J. Grunenputt2, P. Fellon1, A. Tessmann3, E. Kohn4 1 United Monolithic Semiconductors S.A.S, route départementale 128 ­ BP46, 91401 Orsay Cedex, France 2 United Monolithic Semiconductors GmbH, Wilhelm Runge Strasse 11, D-89081 Ulm, Germany 3 Fraunhofer Institut Angewandte Festkörper

Direct BPSK/QPSK Demodulation by Polarisation Rotation V. F. Fusco, N. B. Buchanan High Frequency Electronics Laboratories, School of Electrical and Electronic Engineering, The Queens University of Belfast, Ashby Building, Stranmillis Rd, Belfast BT9 5AH, N.Ireland, Ph: 44 2890 974087, Fax: 44 2890 667023, Email v.fusco-ee.qub.ac.uk, Web: http://www.ee.qub.ac.uk/hfe/ Abstract -- A novel method of

26-28GHz Direct Modulation in a Novel Wide Band Microwave Transceiver for Low Capacity Digital Radio F. Marconi, A. Cucurachi, L. Ferrucci, M. Gimma Siemens Mobile Communications S.p.A. S.S. 11 Padana Superiore km 158 - 20060 Cassina de' Pecchi (Milan), Italy +39-02-95266552 fax +39-02-952 6375 e-mail: Franco.Marconi-siemens.com Abstract - In a world-wide environment in which the competition becom