Development of Low Cost, High Performance Materials for Microwave Resonator Applications R.I.Scott, M.Thomas, C.Hampson* Morgan ElectroCeramics, Vauxhall Industrial Estate, Ruabon, Wrexham, LL14 6HY Tel : +44 (0)1978 810456 Fax : +44 (0)1978 814131 E-Mail : rscott-mec-ru.com * Morgan Materials Technology, Bewdley Rd, Stourport -on-Severn, Worcestershire, DY13 8QR E-Mail : champson-m2t.co.uk Micro

European Microwave Conference 2002 Session: MP1 1 TUNABLE BAND-STOP RESONATOR ON SILICON MICROMACHINED MEMBRANE George Sajin(*), Romolo Marcelli(**), Florea Craciunoiu(*), Alina Cismaru(*) (*) National Research and Development Institute for Microtechnologies PO Box 38-160, 72996, Bucharest, Romania. E- mail: gsajin-imt.ro M2 T - Microwave Microsystems Technology, CNR-IMM, Rome Section Via del

Multi-Octave Analog Predistortion Circuit for HD2 and IM2 Compensation in Radio-over-Fiber Telecommunication Apparatuses L. Roselli1 , V. Borgioni1 , F. Zepparelli1 , M. Comez1 , P. Faccin2 , A. Casini2 1 Dipartimento di Ingegneria Elettronica e dell'Informazione, Universit` di Perugia. a via G. Duranti 93, I-06125 Perugia, Italy. Tel: +39-(0)75-5853633, Fax: +39-(0)75-5853654, e-mail: roselli-di

Micromachined Elliptic Filters at Ka and W Band (EuMC) E. Rampnoux, D. Cros, P. Blondy, P. Guillon, M. Trier*, C. Zanchi** IRCOM ­ UMR CNRS 6615, 123 Av. Albert Thomas, 87 060 Limoges Cédex, France emmanuel.rampnoux-laposte.net * ASTRIUM ­ 31, Avenue des Cosmonautes ­ 31402 Toulouse Cedex 4 ­ France. ** C.N.E.S. ­ 18 Avenue Edouard Belin ­ 31055 Toulouse ­ France. Abstract ­We present measurements

Measured Propagation Characteristics of Finite Ground Coplanar Waveguide on Silicon with a Thick Polyimide Interface Layer George E. Ponchak1 , Edan Dalton2 , Andrew Bacon2 , John Papapolymerou2 , and Emmanouil M. Tentzeris2 1. NASA Glenn Research Center, 21000 Brookpark Rd., MS 54/5, Cleveland, OH, 44135. Tel: 216-433-3504; FAX: 216-433-8705; george.ponchak-grc.nasa.gov 2. School of Electrical an

Comparison of different extraction methods of small-signal parameters for SOI MOSFETs. M. Dehan, J-P. Raskin, D. Vanhoenacker-Janvier Université catholique de Louvain, Microwave Laboratory, 3 place du Levant, B-1348 Louvain- la-Neuve, e-mail : dehan-emic.ucl.ac.be. For the first time, a comparison is made between different equivalent circuits and different extraction procedures using simulated and

Model for MEMS Switches Power Handling and Phase Noise D. Mercier*, P. Blondy*, D. Barataud*, D. Cros*, P. Guillon*, C. Champeaux**, P. Tristant**, A. Catherinot** * IRCOM, ** SPCTS, Faculté des sciences, 123 av. A. Thomas 87060 LIMOGES cedex ­ FRANCE mercier-ircom.unilim.fr or pblondy-ircom.unilim.fr This paper focus on an electromechanical model for the MEMS varactors based on electrical/mechani

A Method to Shorten the Size of Amplifiers Using Vertically Periodic Defected Ground Structure Jong-Sik Lim, Young-Taek Lee, Chul-Soo Kim*, Dal Ahn**, and Sangwook Nam School of Electrical Engineering and Computer Science, Seoul National Univ., Seoul, Rep. Of Korea * Telecomm. Basic Research Lab., Electronics and Telecomm. Research Institute, Daejeon, Rep. Of Korea ** Division of Information Techn

NRD Guide P-I-N Diode Devices for Automotive Radars at 77GHz Futoshi Kuroki, Shouzou Nakamura, Toshihide Fukuchi*, and Tsukasa Yoneyama** Kure National College of Technology, 2-1-11 Aga-Minami, Kure, 737-8506 Japan *The Furukawa Electric CO., LTD., 5-1-9 Higashi-Yahata, Hiratsuka, 254-0016 Japan **Tohoku Institute of Technology, 35-1, Kasumicho Yagiyama, Sendai 982-8577 Japan Abstract-- Two types

Quasi-Optics of Near-MM and Sub-MM Waves in IRE-Kharkov, Ukraine in the 1960-70's Alexei A. Kostenko, Alexander I. Nosich, Irina A. Tishchenko Institute of Radio -Physics and Electronics of the National Academy of Sciences Ul. Proskury 12, Kharkov 61085, Ukraine fax: +380-572-441105, e-mail: kostenko-ire.kharkov.ua The paper presents a retrospective review of the development of short millimeter (m