Capacitively Loaded Loop as Basic Element of Negative Permeability Meta-material Silvio Hrabar, Zoran Eres, Juraj Bartolic Department of Radiocommunications and Microwave Engineering, University of Zagreb, Unska 17, Zagreb, HR-10000, Croatia, e-mail: Silvio.Hrabar-fer.hr Abstract: A simple one-dimensional meta -material which exhibits negative permeability within a finite frequency band is propos

Left-Handed Transmission Lines and Equivalent Metamaterials for Microwave and Millimeter-Wave Applications C. Caloz and T. Itoh Electrical Engineering Department, University of California, Los Angeles, CA 90095 Phone: (310) 206-1710, Fax: (310) 206-4819, E-Mail: caloz-ee.ucla.edu I. I NTRODUCTION Left-handed (LH) materials, which are characterized by negative constitutive parameters, have drawn c

Interacting Magnetic Resonators for Left-Handed Metamaterials Philippe Gay-Balmaz and Olivier J. F. Martin Electromagnetic Fields and Microwave Electronics Laboratory Swiss Federal Institute of Technology, ETH-Zentrum, ETZ CH-8092 Zurich, Switzerland martin-ifh.ee.ethz.ch We study experimentally and numerically the electromagnetic resonances in split ring resonators (SRRs), around 1GHz. For an ind

Refining the Perfect Lens: Layered Media and Optical gain S. Anantha Ramakrishna and J.B. Pendry Condensed matter theory group, Blackett Laboratory, Imperial College, London SW7 2BU, U.K., email: s.a.ramakrishna-ic.ac.uk; j.pendry-ic.ac.uk We present refinements of the original perfect lens which focuses both the near and the far electromagnetic fields. We show that the performance of the perfect

Harmonic Reduction Amplifier using /4 High Impedance Bias Line with Defected Ground Structure (DGS) o Si-Gyun Jeong*, Do-Kyeong Hwang*, Young-Pil Kwon*, Yong-Chae Jeong*, Chul-Dong Kim** *Division of Electronics and Information Engineering, Chonbuk Nat'l Univ., Chonju-Si, Korea ** Sewon Teletech, Anyang-Si, Kyounggi-Do, Korea Email: ycjeong-moak.chonbuk.ac.kr Abstract ­ In this paper, a new defe

Analog Controlled Adaptive Feedforward Amplifier for IMT-2000 Band Young-Jean Song, In-Ju Oh, Kyu-Jae Seo, Yong-Chae Jeong, Chul-Dong Kim* Dept. of Information & Communication Engineering Chonbuk National University, 66414 Duchjin-Dong Duckjin-Gu Chonju Korea 561-756, ycjeong-moak.chonbuk.ac.kr *Sewon Teletech Inc., 1023 Kwanyang-Dong Dongan-Gu Anyang Kyounggi Korea Email: ycjeong-moak.chonbuk.ac.

A Fully-Manufacturable 0.5µm SiGe BiCMOS Technology for Wireless Power Amplifier Applications V. Ramachandran, A. J. Joseph, J. B. Johnson, M. D. Gallagher, P. -O. Brandt*, L. Tilly*, D. R. Greenberg**, W. E. Ansley**, U. Gogineni, D. L. Harame, J. S. Dunn IBM Microelectronics Division, Essex Junction, VT, vidhar-us.ibm.com *Ericsson Mobile Platforms AB, Nya Vattentornet, SE-221 83 Lund, Sweden, L

Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design M. Pagani, D. Argento, M. Bignamini, I. De Francesco, G. Favre, A. Meazza, A. Mornata, and F. Palomba ERICSSON LAB ITALY Via Cadorna, 73 ­ 20090 ­ Vimodrone (MI) ­ Italy In this paper the intermodulation distortion (IMD) behaviour of a 0.25 power PHEMT is investigated under several device operating co

25W C-BAND HIGHLY EFFICIENT ON BOARD HYBRID AMPLIFIER A. Darbandi, M. Zoyo, J.Y. Touchais, and H. Lévèque Alcatel Space Industries BP 1187 26 avenue J.F. Champollion 31037 Toulouse France Phone: (33) + 5.34.35 57.69 e-mail: alireza.darbandi-tehrani-space.alcatel.fr ABSTRACT - A very high efficient, low distortion Cband power amplifier using a linear and non-linear models of the PHEMT devices has b

Analysis of nonlinear memory effects on the linearity of a SiC MESFET S. Augaudy, R. Quéré, J.P. Teyssier IRCOM, CNRS, University of Limoges, IUT GEII 7 Rue J. Vallès 19100 Brive France Phone (33) 5.55.86.73.18, Fax (033) 5.55.86.14.26, e-mail: augaudy-brive.unilim.fr With experimental characterizations based on a pulsed I-V and pulsed S-parameters measurement set-up, we investigate the trapping a