Quantum MMIC (QMMIC) VCO's for Wireless Applications Vijay Nair, Mandar R. Deshpande, Jonathan Lewis, Nada El-Zein, Scott Ageno, Gary Kramer, Marilyn Kyler, Mike Hupp and Herb Goronkin Physical Sciences Research Laboratories Motorola Labs., Motorola Inc., 7700 S. River Parkway, M/D ML34, Tempe, AZ 85284, USA Email: vijay.nair-motorola.com, Phone 480-755-5590, Fax: 480-755-6065 ABSTRACT The monoli

Packaged Millimeter Wave Thermal MEMS Switches P. Blondy*,D. Mercier*, D. Cros*, P. Guillon* P. Rey**, P. Charvet**, B. Diem** C. Zanchi***, L. Lapierre***, J. Sombrin***, J.B. Quoirin**** Tel: 05 55 45 77 31 ­ Fax: 05 55 45 76 49 ­ email: pblondy-ircom.unilim.fr * IRCOM, Faculté des Sciences, 123 avenue A. Thomas, 87000 LIMOGES FRANCE ** CEA-LETI, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9 *** CN

Bulk Silicon Micro-Machined MEM Switches For Millimeter-Wave Applications K. Grenier1,2, P. Pons1, R. Plana1,2, J. Graffeuil1,2 2 LAAS / CNRS, 7 av. du Colonel Roche, 31 077 TOULOUSE cedex 4, France Université Paul Sabatier, 118 Route de Narbonne, 31 062 Toulouse cedex 4, France By applying a DC voltage on the central conductor of the coplanar waveguide (CPW) transmission line, the bridges are at

Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs Jeremy B. Muldavin and Gabriel M. Rebeiz Abstract-- This paper presents a metal-to-metal contact MEMS shunt switch suitable for DC-40 GHz applications. A novel pull-down electrode is used which applies the electrostatic force at the same location as the metal-to-metal contact area. A contact resistance of 0.15 - 0.35 is

Silicon Micromachined Packages for RF MEMS Switches Alexandros Margomenos, Dimitrios Peroulis, Katherine J. Herrick, and Linda P. B. Katehi Radiation Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109-2122, USA. amargome-engin.umich.edu, katehi-engin.umich.edu Abstract-- MEMS technology has major applications in developing smal

A MOS Model 9 Extension for GHz CMOS RF Circuit Design Christian Rye Iversen Siemens Mobile Phones A/S, DK-9490 Pandrup, DENMARK, Christian.Iversen-aal.siemens.dk Also with the Radio Frequency Integrated Systems and Circuits (RISC) Group, Aalborg University, DENMARK. ABSTRACT This paper presents an extension to the compact MOS model 9 that enables accurate simulation of CMOS RF circuits in the GHz

SIZE DEPENDENT INFLUENCE OF THE PAD AND GATE PARASITIC ELEMENTS TO THE MICROWAVE AND NOISE PERFORMANCE OF THE 0.35 µm n AND p TYPE MOSFETs. P.Sakalas &$, H.Zirath*-, A.Litwin+, M.Schröter& , A.Matulionis$, $ Semiconductor Physics Institute, 2600 Vilnius, Lithuania, paulius-ktl.mii.lt, sakalas-iee.et.tu-dresden.de & Dresden University of Technology, Dresden, Germany schroter-iee.et.tu-dresden.de *

Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si George E. Ponchak1, John Papapolymerou2 and Emmanouil M. Tentzeris3 1. NASA Glenn Research Center, Cleveland, OH 44135; george.ponchak-grc.nasa.gov 2. Dept. of Electrical and Computer Engineering, The University of Arizona, Tucson, AZ 85721 3. School of Electrical and Computer Engineering, Georgia In

ALTERNATIVE ARCHITECTURES OF SOI MOSFET FOR IMPROVING DC AND MICROWAVE CHARACTERISTICS M. Dehan, D. Vanhoenacker and J.-P. Raskin Microwave Laboratory, Université catholique de Louvain Place du Levant, 3, B-1348 Louvain-la-Neuve, BELGIUM e-mail: raskin-emic.ucl.ac.be ABSTRACT DC and high frequency characteristics of innovative SOI MOSFET's such as graded channel and dynamic threshold voltage MOS a

38 GHz Antennas on Micromachined Silicon Substrates. Romolo Marcelli(1), Mircea Dragoman(2), Dan Neculoiu(3), Flavio Giacomozzi(4), Alexandru Müller(2), N. Nitescu(2) M2T ­ Microwave Microsystems Technology CNR ­ Institute for Microelectronics and Microsystems, Rome Section Via del Fosso del Cavaliere 100, 00133 Roma, Italy Phone: +39 06 4993.4536; E-mail: r.marcelli-psm.rm.cnr.it National Institu