Design of a Compact Dual-Band Antenna for Mobile Communications Handsets Marta Martínez-Vázquez and David Sánchez-Hernández IMST GmbH, Kamp-Lintfort, Germany, Departamento de Tecnologías de la Información y Comunicaciones, Universidad Politécnica de Cartagena, Spain martinez-imst.de david.sanchez-upct.es Abstract: Dual-band handsets are underway to become an industry standard for mobile communic

A direct microwave down-conversion method for software radios P.Horváth, T.Marozsák, E.Udvary, A.Zólomy, T. Berceli, B. Eged Technical University of Budapest, Department of Microwave Communications 1111 Budapest, Goldmann György-tér 3, Hungary, Phone(+36)-1-463-4142 Fax: (+36)-1-463-3289, e-mail: berceli-mht.bme.hu Abstract ­ Over the past few years, the software radio has emerged from theoretic

Microwave Modules for High Capacity Urban Radio Systems with 128 QAM modulation Barbara Gabbrielli, Giovanni Gilardi Alcatel Italia ­ str.Provinciale per Monza 33, 20059 Concorezzo (MI), Italy barbara.gabbrielli-netit.alcatel.it giovanni.gilardi-netit.alcatel.it Abstract ­ A completely new family of Radio Systems has been developed to meet the increasing demand for low cost, easily deployable sys

A New Dual mode GSM/EDGE transceiver using modulation loop C.Berland, G.Baudoin, M.Villegas Pôle d'électronique Hautes Fréquences du Polytechnicum de Marne la vallée Laboratoire Signaux et télécommunications, Groupe ESIEE, France berlandc-esiee.fr, baudoing-esiee.fr, villegam-esiee.fr Abstract ­ Transmitting data with GSM system is a real need. ETSI, the European Telecommunication Standard Instit

ACPR to third order interception point and 1 dB compression point new relationship Laurent Lecheminoux, Martine Villegas Pole d'Electronique Hautes Fréquences du Polytechicum de Marne-la-Vallée Laboratoire signaux et télécommunications - Groupe ESIEE - Cité Descartes - 93162 Noisy-le-Grand Cedex, FRANCE lechemil-esiee.fr ­ villegam-esiee.fr Abstract : New relationship between Adjacent Channel Pow

Power Amplifier Linearisation Through Low-Frequency Feedback W.J. Jenkins and A. Khanifar Department of Electronic and Electrical Engineering; University College London Torrington Place, London WC1E 7JE Tel: (+44) 20 7679 3959 Fax: (+44) 20 7388 9325 Email: w.jenkins-ee.ucl.ac.uk, a.khanifar-ee.ucl.ac.uk Abstract This paper outlines the development of a novel linearisation technique that has been

A 1.5 GHz Fully-Monolithic CMOS LNA and Its Noise Behavior Arif Mahmud, Samir El-Ghazaly Arizona State University, Tempe, AZ, USA arif-asu.edu sme-asu.edu Abstract A 1.8 V, 1.57542 GHz LNA has been designed for a 0.5-µ m CMOS process. This amplifier provides a forward gain of 19 dB with a low noise figure of only 2 dB while drawing 17 mW DC power. Unlike most of the circuits in literature, this d

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A 0.9V Low Voltage 0.13 W Power Amplifier with 37 % PAE at 1 GHz in Standard CMOS Thomas Liebermann, Marc Tiebout, Werner Simburger , Hans-Dieter Wohlmuth , Alexander Heinz ¨ Infineon Technologies AG, Dept. Wireless Systems Tel +49 89 234 45856, Fax +49 89 234 28843 P.O. Box 800949, D-81609 Munich, Germany e-mail: thomas.liebermann-infineon.com Dept. Corporate Research P.O. Box 830951, D-81730 M

Silicon Carbide amplifiers for communication applications Farid Temcamani1, Pierre Pouvil1, Olivier Noblanc2, Christian Brylinski2, Bernard Darges3, Frédéric Villard4 and Jean-Paul Prigent4 ENSEA-EMO, 95014 Cergy-Pontoise Cedex, France THOMSON-CSF LCR, 91404 Orsay Cedex, France 3 THOMCAST, 78702 Conflans Ste Honorine Cedex France 4 THOMSON-CSF TCC, BP 156, 92231 Gennevilliers Cedex, France 2 1 A