Transmitter -Receiver switch based on High-Tc superconducting film. ABKozyrev*, V.N.Osadchy*, MM.Gaidukov*, AS.Pavlov*, VMeerovich**, VSokolovsky** *Cryoelectronic Lab, St.Petersburg Electrotechnical University, St.Petersburg, Prof.Popov str5,197376 Russia Tel/Fax +7(812) 234-4809. **Physics Department, Ben-Gurion University of the Negev, P.O.B. 653, 84105 Beer-Sheva, IsraeL Abstract. New micr

DESIGN OF MICROSTRIP BALANCED MIXERS FOR SPURIOUS OUTPUTS SUPPRESSION IN KU BAND SATELLITE REPEATERS A. Suriani, P. Montanucci, P. Ranieri Alenia Aerospazio. Space Division. Equipment and Technologies Unit - via Marcellina - 00131Rome,Italy phone: 39-6-4151.2489 - fax: 39-6-4151.2507 - email: suriani-roma.alespazio.it ABSTRACT. This paper focuses on design of microstrip uniplanar mixers suited for

77GHz PHFET -Harmonic-Mixer MMIC A.Schaefer1, J.-M.Dortu2, L.KlapprothI, W.Stieblerl, G.Boeckl, W.Keliner 1Technical University of Berlin, Microwave Group, Germany Einsteinufer 25, Skr.HFT5-1, 10587 Berlin, Germany 2SIEMENS AG Corporate Technology, Munich, Germany Abstract A harmonic mixer has been developed. We obtain a conversion loss of 18dB at a RFfrequency of 77GHz utilizing the 5thLO-harmoni

AN MMIC-BASED FREQUENCY POWER FOR A 76 GHz RADAR M. Stotz * and J. Wenger DOUBLER MODULE TRANSMITTER WITH 20 mW OUTPUT Daimler-Benz Research Center, D-89081 Ulm, Germany Tel. +49-731-5052071, Fax +49-731-5054103 f1.-mail: j.wenger-dbag.ulm.daimlerbenz.com TH Darmstadt, D-64283 Darmstadt, Germany Abstract: A novel frequency doubler module with an output power exceeding 20 mW at 76 GHz and a co

FR4 PCB Modulation Transfer MW VCO up to 16 GHz * c. Buoli G. Mora L.A. Cervi A ITALTEL 20060 Cassina de Pecchi, Milan, Italy Phone +39 2 95259340; Fax +39 295259375; Telex 330346 Abstract The CPM modulation scheme allows microwave vco phase locking to the IF signal: in this way the vco output, provides directly the modulated RF carrier. The aim of this paper is to suggest the use of the FR4 as m

BJT Feedback LN A with Input Port Simultaneously Signal and Noise Matched Luciano Boglione, Roger D. Pollard, Vasil Postoyalko Institute of Microwaves and Photonics School of Electronic & Electrical Engineering The University of Leeds Leeds LS2 9JT United Kingdom Tel.: +44 1132332084 Fax: +44 1132332032 Email: eenlb-sun.leeds.ac.uk ABSTRACT This paper presents the first implementation of a novel

A Silicon CMOS Monolithic RF and Microwave Switching Element Robert H. Caverly Department of Electrical and Computer Engineering University of Massachusetts Dartmouth N. Dartmouth, MA 02747-2300 Abstract RF and microwave switching elements using silicon CMOS technology are being investigated and show promise as an alternative to the traditional PIN diode and GaAs MESFET devices. Silicon CMOS RF sw

High-performance Power PHEMT for Wireless Communications Y. Tkachenko, L. Kapitan, L. Leung, D. Mitchell and D. Bartle Alpha Industries, 20 Sylvan Rd, Woburn MA, 01801, Tel (617)-935-5150, Fax (617)-824-4572, e-mail: gtkachenko-alphaind.com ABSTRACf A low-cost 0.7 µm gate power pseudomorphic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passi

TUN NETT Operation Mode in Silicon H. Jorke, G. Kahmen* and l-F. Luy Daimler Benz Research Center Ulm, Wilhelm-Runge Str. 11, 89081 Ulm e-mail: helmut.jorke-dbag.ulm.daimlerbenz.com *present address: Inst. f. theoret. Elektrotechnik, RWTH Aachen Kopernikusstr. 16,92074 Aachen Abstract Using DC and RF characterization techniques the transition from impact avalanche transit time (IMP ATT) to tunnel

High Performance Double Recessed Alo,zGao,sAslIno,2SGao,7sAs PHEMTs Power Applications W. Marsetz, A. Hiilsmann, T. Kleindienst, S. Fischer, M. Demmler W.Bronner, T. Fink, K. Kohler, M. Schlechtweg Fraunhofer Institute for Applied Solid State Physics (IAF) Tullastr 72,79108 Freiburg, Germany, Phone +49-761-5159-641 Fax +49-761-5159-565, E-mail: marsetz-iaf.fhg.de for Microwave ABSTRACT Double r