A new silicon micro-test-fixture facilitates the re-usability of accurately characterized low-power FET devices
E. Wasige, G. Kompa, F. van Raay, I.W. Rangelow, F. Shi, W. Scholz, R. Kassing
A new silicon micro-test-fixture facilitates the re-usability of accurately characterized low-power FET devices
E Wasige, G Kompa, F van Raay, I W Rangelow*, F Shi*, W Scholz* and R Kassing*
FG Hochfrequenztechnik / AG Technische Physik*, University of Kassel, D-34121 Kassel, Wilhelmshoher Allee 73 Tel: +49-561-8046364 Fax: +49-561-8046529 E-mail: wasige-hfm.e-technik.uni-kassel.de Abstract
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