26th EuMC. 9-12 September 1996. Hotel Hilton Atrium . Prague. Czech Republic Distributed approach for modeling integrated MESFET/HFET devices W Stiebler, M Matthes, T Koppel, G Bock Technical University of Berlin, Department of Electrical Engineering, Microwave Engineering Group, Einsteinufer 25; 10587 Berlin, Germany; Fax: +49/30/314-24626 Abstract To model the distributed nature of an integrate

26th EuMC. 9-12 September 1996. Hotel HiItonAtrium. Prague. Czech Republic A simplified nonquasi-static FET model Monica Fernandez Barciela, P J Tasker*, M Demmler** and E Sanchez Dpto. Tecnologias de las Comunicaciones, Universidad de Vigo, Spain. *Electronic Engineering Division, University of Wales, U.K. **Fraunhofer Institut fur Angewandte Festkorperphysik, Freiburg, Germany. Abstract A

26th EuMC. 9-12 September 1996. Hotel Hilton Atrium . Prague. Czech Republic An accurate neural network model of FET for intermodulation and power analysis J Rousset, Y Harkouss, J M CoUantes*, M Campovecchio. IRCOM CNRS, University of Limoges, 123 Avenue Albert Thomas, 87060 Limoges, FRANCE. *now with Departemento de Electricidad y Electronica, Universidad del Pais Vasco, Bilbao, SPAIN. Abstract

26th EuMC . 9.12 September 1996. Hotel Hilton Atrium. Prague. Czech Republic Commercial GaAs MMICs: The device manufacturer's perspective K C Vanner GEC-Marconi Materials Technology Ltd., Caswell, Towcester, Northamptonshire, NN12 SEQ, United Kingdom. Abstract In order to achieve a competitive position in markets for electronic systems, it is essential that equipment suppliers deliver perfo

26th EuMC. 9-12 September 1996. Hotel Hilton Atrium . Prague. Czech Republic Convergence of fixed and mobile communications towards universal personal communications Anton Kuchar Institute of Radio Engineering and Electronics Academy of Sciences of the Czech Republic, Prague Abstract The objective of the paper is to provide an overview of the latest developments in the fixed. as well as mobile la

State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications Roland Diehl and Michael Schlechtweg Abstract Based on arsenides, phosphides and more recently also on nitrides and antimonides the portfolio of III-V semiconductor devices is large. Solid solution and heterostructuring enable high versatility in electronic and optoelectronic characteristics. Lattic



Characterisation of probe-tip/sample signal transmission in electrical sampling scanning force microscopy C Bihm, J Sprengepiel, and E Kubalek A Leyk, Abstract A scanning force microscope test system has been used in former work for MMIC characterisation up to 40 GHz. The local probe-tip/sample interaction is known but the transmission of high frequency sampling signals can cause unknown disturba

,Estimation of group delay ripple of physical networks using a fast, bandlimited Hilbert transform algorithm and scalar transfer function measurements Philip Perry and Thomes.lli Brazil Abstract A set of PC based programs has been developed for use with a standard scalar network analyser (SNA) to measure and display relative group delay. The core of the data processing algorithm is a form of the

Accurate method ferrite substrates Krzysztof Derzakowski* I for measurement of Adam Abramowicz** Abstract This paper describes the method for measurement of the complex permittivity and the complex initial permeability of ferrite substrate. For this purpose, the two section dielectric resonator structure operating in the TE018-mode is applied. The results measurements in the simplified measure