Spurious-free condensed-node time-domain simulation of guided wave problems Malgorzat. eeluch Marcyslak, WoJciech K Gwarek Institute of Radioelectronics, Warsaw University of Technology, Nowowlejska 15/19, 00-665 Warsaw, Poland tel.:(+4822)6607631, fax:(+4822)255248, e-mail: gwarek&ire.pw.edu.pl Abstract A novel FDTD algorithm is developed based on the generalized wave equation. It utilizes the

A hybrid method solution of scattering by an elliptic cylinder (TM case) Tanmoy Roy, Tapan K Sarkar*, Antonij- R Djordjevic**, Magdalena Salazar. Palma*** *Department of Electrical Engineering Syracuse University Syracuse, NY 132441240, USA **Department of Electrical Engineering University of Belgrade, 11001 Belgrade, Yugoslavia ***Dpto.Senales, Sistemas y Radiocomunicaciones ETSI Telecomunicacion

Multi-mode simulation of homogeneous waveguide components using a combination the FDTD and FD2 method M Werthen, M Rillweger I Wolff and of Institut fOrMobil- und Satellitenfunktechnik Carl-Friedrich-GauB-Str. 2. D-47475 KampLintfortTel. #49-2842-981200, Fax. #49-2842-981299 By combing the FDTD and the FD^2 method, a nearly ideal absorbing boundary together with a mode extraction algorithm for

Simulation burnout v A Vashchenko, V F Sinkevitch* J B Martynov, of the GaAs mesfet N A Kozlov, A S Tager** *Science & Research Institute "PULSAR", Moscow, Russia **SR&PC "ISTOK", Fryazino, Moscow region, Russia Abstract Electrical breakdown in GaAs MESFETs and GaAs n+-i-n+ structures have been simulated by twodimentional (2-D) quasi hydrodynamic isothermal model with two types of carriers unde

SCFL static frequency divider using InAIAs/lnGaAs/lnP HEMTs Yohtaro Umeda, K_uo O..fune, Takatomo Enokl, Hlroshllto, and Yasunobu Ishii NTTLSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01 Japan, Tel: +81 46240 2792, Fax: +81 46240 2872 Abstract 38,6-GHz operation of an SCFL static binary frequency divider is achieved using 0.1-µm-gate nAIAs/ InGaAs/inP HEMTs with an InP-recess-etch s

Electromagnetic investigation of travelling wave operation in AIGaAsInGaAs pseudomorphicHEMT's M Farina, L Pierantoni, T Rozzi Oipartimento di Elettronica ed Automatica, Universita di Ancona, Via delle Brecce Bianche, 60131 Ancona, ITALY. Abstract Considering a standard InGaAs-AIGaAs PM HEMT, we report an accurate theoretical e.m. characterisation of propagation phenomena arising in this structure

Modelling of low noise InP based HEMTs B.U H Klepser M Scheler, W Patrick W Bichtold Laboratory for Electromagnetic Fields and Microwave Electronics, Swiss Federal Institute of Technology Zurich, Gloriastr. 35, CH-8092 Zurich, Switzerland Tel (+) 41 1 6326672 Fax (+) 41 1 632 11 98 A device model for both high frequency small signal and noise behaviour of InP-HEMTs,depending on both gate and dr

A new temperature noise model of HFET with special emphasis on a gate. leakage current'a.nd the. bias dependence nOise sources . . investig.ation of of the equivalent R Reuter, at van Waasen, D Peters, U Auer, W Brockerhoff, F .J .Tegude Solid-State Electronics Department, Sonderforschungsbereich SFB 254, Gerhard-Mercator University Duisburg, KommandantenstraBe 60, 47057 Duisburg, Germany Tel (+

HEMT physical model for MMMIC CAD C.G. Morton, C.M. Snowden and M.d. Howe. Department of Electronic and Electrical Engineering, University of Leeds, Leeds, UK. Abstract A quasi-two dimensional HEMTmodel is reported whichforthe first time accurately predicts the DC and millimetre-wave operation of the device over all bias conditions. The model accurately predicts HEMT operation close to device pi

Multipactor testing of multiplexer and waveguide components exposed to multiple carrier loading K. H. Geissler and D. Wolk ANT Nachrlchtentechnik GmbH, D- 71522 Backnan9 Abstract Measurements of multipaction thresholds obtained with one to 10 carrier signals are reported. Filters of the corrugated type served as test samples. The experimental set-up required for multicarrier tests is described. Wh