RC-TERM CORRECTION IN THE EVALUATION OF PARASITIC INDUCTANCES FOR MICROWAVE TRANSISTOR MODELLING G.Leuzzi, A.Serino, F.Giannini Dept. of Electronic Engineering University of Roma 'Tor Vergata' Via della Ricerca Scientifica - 00133 Roma, Italy ABSTRACT Linear and non-linear microwave active devices are usually modelled with an equivalent circuit for CAD applications. The circuit is composed of pa

MODELING GAAs PIN DIODES FOR MICROWAVE AND MILLIMETER W AVE ApPLICATIONS Robert H. Caverly Department of Electtical and Computer Engineering Univ. Massachusetts Dartmouth North Dartmouth, MA USA 02747 Abstrad Nitin Jain Corporate Research and Development MIA-COM, Inc. 100 ChelmSford Street Lowell, MA USA 01853 The need to keep system development cost low has given important emphasis to using we

Integrated CAD System for an MMIC using Symbolic Layout Yoshinobu Sasaki, Noriyuki Tanino and Shigeru Mitsui. Optoelectronic & Microwave Devices.Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, 664, JAPAN Tel: +81 727 84 7384 Fax: +81727 80 2694 ' Abstract :1 t'''' l In this paper, a microwave symbolic layout is proposed as an interface between a circuit simulation and a mask patt

NONLINEAR RF CHARACTERIZATION AND MODELING OF HETEROJUNCTION BIPOLAR TRANSISTORS UNDER PULSED CONDmONS J.P. Viaud*, R. Sommet*, J.P. Teyssier*, D. Floriot**, R. Quere* *IRCOM CNRS URA n0356 Universite de Limoges(FRANCE), IUT 1 rue Jules Valles 19100 BRIVE **TIIOMSON-CSF LCR domaine de Corbeville, route departementale 128, 91401 ORSA Y cedex Abstract I(V) and S-parameters pulsed measurements have

HEMT NOISE PARAMETER FORMULATION BY USING INTRINSIC NOISE SOURCES ONE BY ONE .Tuha Mallat Helsinki University of Technology, Radio Laboratory, Ota.ka.a.ri A, 5 FIN-02150 Espoo, Finland, FAX: 358-o-451~2152 1 ,,~~;' , , ABSTRACT A new approach, to noise parameter formulation is presented and applied to a HEMT equivalent circuit. The approach focuses in representing the noise parameters of the

The Characterisation and Large-Signal Modelling of InGaAs Pseudomorphic ffigh Electron Mobility Transistors Vicentiu I. Cojocaru, Philip Perry and Thomas J. Brazil DepartmeRt of Electronic and Electrical Engineering University College Dublin, Dublin 4, Ire1.and Tel: +353-1-7061908; Fax: +353-1-2830921 ; E-mail: vivi-hertz.ucd.ie ABSTRACT A high-performance pseudomorphic InGaAs/AlGaAs HEMT has be

Direct -extraction . method of small-signal equivalent circuit model of a GalnP/GaAs Heterojunction Bipolar Transistor. . A. Ouslimani, A. Birafane, D. Pasquet, P. Pouvil, H. Leier* Ecole Nationale Superieure de l'Electronique et de ses Applications, l~s Chenes Pourpres 95014 Cergy Pontoise * Daimler Benz Research Center, P.O.Box 2360, 0-7900 ULM Germany Abstract: A new method for determin

A RIGOROUS MODEL OF TUNNELING AND THERMIONIC and Klaus CURRENTS Schuenemann IN MICROWAVE HFETS Ali Abou-Elnour Technische Universitaet Hamburg-Harburg Arbeitsbereich Hochfrequenztechnik, 21071 Hamburg, Germany ABSTRACT A new model is presented over to the simultaneously heterojunction The energy . calculate and over the the both tunneling and thermionic currents Schottky subband

INCREASE OF RELIABILITY'FOR SATELLITE COMMUNICATION CIRCUITS BY USE OF LONG~DISTANCE 'SITE DIVERSITY . . , 'l ""'.,,',., " ~ " Matsuichi , .' YAMADA * 1 ,and! )Yoshio, ',.KARAS AWA.:lf2 , *1 Tokyo Engineering 619-02, Japan '", , Umver$ity, '" . j f t404-I'Katakuta-chO.Ha(:hiohji-shi, " ' " Tpkyo ,.19Z. J~pan . .. . .,' *2 ; AT~ :OptieaL 8rtdRadio COdL,:~, Lab...;b2Hibt14ai. ..' .