COMPUTER AIDED DESIGN OF DlELECTRIC RESONATORS FILTERS . '. IN CIRCULARW AVEGUIDE , ) Giusepp,e Maccliiarella,Giovanni B. Stracca,Marco Politi DipartiJ.Ilentgdi ElettrQ-ca e.Infonnazione del Politecnico, di Milano Piazza L~QnardQ,daVillci 32 20133,Milano,-.ITALY ABSTRACT The paper describes a new CAD procedure for designing bandpass filters realized with ring or cylindrical dielectric resonat

A SIMPLE SOLUTION FOR HIGH PERFORMANCE, COST-EFFECTIVE FILTERING: A NEW TECHNIQUE WIDENS THE TUNING RANGE OF TM-MODE DIELECTRIC RESONATOR FILTERS. Antonella Dal Lago I Alberto Lobina I Riccardo Urciuoli SIEMENS Telecomunicazioni S.p.A. 20060 Cassina,de' Pecchi (MI) Italy ABSTRACT A duly shaped Dielectric Resonators widens the tuning range of TM-mode Dielectric Resonator filters and allows a really

HIGH EFFICIENC¥ C-BAND MONOLITHIC POWER AMPLIFIERS I. TELLIEZ, P. CHAUMAS, S. MARCILLAUD, E. W ATRIN THOMSON-CSF Semiconducteurs Specifiques R.D. 128, B.P. 46, 91401 ORSAY cedex, FRANCE ABSTRACT This paper describes the design, fabrication and measured performances of C-band monolithic twostage and three-stage amplifiers. These two on-chip fully matched versions designed for c1ass-AB operation

A Novel Technique for the Design of High Efficiency Power Amplifiers ,J Imbomone, MIA-COM IC DesigP Center, Lowell, Massachusetts, USA R Pantoja, Consultant, MIA-COM Corporate R&D, Lowell, Massachusetts, USA W Bo~ch, MIA-COM Corporate R&D, Lowell, Massachusetts, USA * * Now with ESA~ESTEC, Noordwijk, The Netherlands ABSTRACT A novel technique for the design of highly efficient power amplifiers b



POWER GalnP/GaAs HBT MMICs S.L. Delage, D. Floriot, H. Blanck, S. Cassette, E. Chartier, M.-A. diForte-Poisson, C. Brylinski, Y. Perreal, and D. Pons Thomson-CSF/ Laboratoire Central de Recherches, F-91404 Orsay Cedex P. Roux, P. Bourne, and P. Chaumas Tq.omson-CSF/ TCS - BP 46, F-91401 Orsay Cedex ABSTRACT GaInP/GaAs HBT technology is an excellent alternative to GaAIAs GaAs HBTs. We .present n

ffiGH EFFICIENCY AND POWER ION IMPLANTED MESFET DEVICES E.M. Bastida, P. Antolini, A. Castelli. G.P. Donzelli B. Gabbrielli, C. Longari, F. Rasa, L. Scopelliti ALCATEL TELETTRA, Via Trento 30, 20059 Vimer~te, MI, Italy, ABSTRACT The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular

A MULTILAYER ACTIVE MICROSTRIP ANTENNA ARRAY USING/,SIUCON BIPOLAR MONOUTHIC AMPLIFIERS IN A SPATIAL POWER COMBINING. CONFIGURATION David Smchez-Hemmdez, Sukhdeep Singh and Ian Robertson Communications Research Group Department of Electronic and Electrical Engineering King's College, University of London. Strand, London WC2R 2LS, UK. Phone: + 44 71 8732898 Fax: + 44 71.8364781 e-mail: udee321-uk.

Mode Switching in an Active Antenna Using Reactive PET - Masahiko Minegishi, Jenshan Lin and Tatsuo ftoh Electrical Engineering Department, UCLA Los Angeles, CA90024-1594, U. S. A. Shigeo Kawasaki of Co",q,unications Engineering, Tokai University Hiratsuka, Kanagawa 259-12, Jqpan Department ~ In this paper a new technique of realizing the mode switching in an active antenna by using reactive

NONLINEAR ACTIVE ANTENNA ARRAY DYNAMICS,AND LOAD ANALYSIS D.E.J. Humphrey, S. Sancheti, V.F. Fusco " High Frequ,encyEleqtr()nicsLaboratorY I)epartment q( Electrical and'~lectromc Engineermg" . The Queen' ~. University of Belfas~, Ash~y, Buildings, Stranmillis Road~Belfast, BT9 SAIl, N.Ifeland, United Kingdom:' Tel: +44 (0)232 245133, Fax: +44 (0)232 667023 ) ABSTRACT This paper describes a