Linear and non-linear modelling verification of power HBTs Hien Do-Ky"', Tony Laneve""",Somsack Sychaleun""", Malcolm Stubbs"',J. S. Wight"'''' .Communications ResearchCentre, 3701Carling Ave., Ottawa, Ontario, K2H 8S2, Canada. Ottawa, Ontario, K1S 5B6,Canada. "Carleton University, 1125Colonel ByDr., Abstract: A large-signal model for power heterojunction bipolar transistors (HBTs) is described

A Novel MMIC Balanced FET Mixer with Superior Performance A.H Baree &:I.D. Robertson CommUl1ications Research Group DepL of Electronic &:Electrical Engineering ,.\ King's College London University of,London Sttand. LOndon WC2R 2LS. U.K. . TEL: +44 71 873 2523 FAX: +44 71 8364781' ABSTRACT . , The design and performance of a new type of monolithic balanced FET mixer is described in this .

for Simultaneous On Optimum Feedback Input Power and Noise Matched Amplifier Jianguo Xu Department of Microwave Technology Chalmers University of Technology 41296 Goteborg, SWEDEN ABSTRACT A X-factor is defined as a figure of merit of a two-port for the purpose of simultaneous matching and is used to find the Optimum Feedback Conditions. For the transistors ATF35076 and FHR02FH over 2 to 8 GHz,

A Tunable Lossless HBT Broad-Band Monolithic Microwave Floating Active Inductor c. Zanchi,T. Parra, J. Graffeuil -. j' LAAS-CNRS and Universite Paul Sabatier, 7 avodu Colonel Roche, 31077 Toulouse, France. . Tel: (33) 61 33 63 71 ; ~~ : (33} 6133 62 O~ Abstract: A monolithic floating Tunable Active Inductor (TAI) based on an Heterojunction Bipolar Transistor design is proposed. This circuit is co

PASSIVE HICf:OWAVE ELECTRODYNAMIC LIMITER SYSTEM W1'l'H A NE\tJ ~;EHICUNDU(~~TOn DIODE AND A NOVEL I.V. Lebeljev. A.S. ::,rulitnikc:vJ., N.V. Dl'ozdovski, L.M. DrozdDvskaia2 1Moscow Power Engineer ir Ig Inst i tu,Le (MP;EI) " KrasnokOi:<.armennaya, 1'i, Moscow. 1l12~1(ZI, Russia, phune: +7-095-:362-7~84. fax: +7-095.-362-8818 2Special,Research Bureau liPEI, KrasnoKazaI'm

FAST ELECTRIC PULSE EXCITATION OF AN OSCILLATOR WITH SEVERAL TUNNELING DEVICES IN SERIES Olga Boric-Lubecke, Dee-Son Pan and Tatsuo Itoh University of California, Los Angeles. 405 Hilgard Avenue, Los Angeles, CA 90024, U.S.A. ABSTRACT An oscillator with several tunneling devices in series has a demanding excitation condition due to the difference in the I-V characteristics of the individual device



t:, " Mkrowa~e Doiseofhot electroDsin AlxGal-xAs chan.,eL Procedure for measuring AIGaAs lattice heating + M.de MU~C" , . -" E.RI CHARD, -- A .BENVENVTI '.' J.VANBREMEERSCH------ , . . J.ZIMM~RMANNuu, " ABSTRACT: Hot electron noise temperatures using a pulsed measurement technique as function of electric field in the frequency range 50MHz-4GHz are presented in Si doped AIxGa l-xAs alloy w

Reduction of the Feedback Capacitance of HFETs by Changing Transistor Layout and Using Via Holes for Source Grounding Niklas Rorsman, Mikael Garcia, Christer Karlsson, . and Herbert:, Zirath .. ~. ~ .' Department of Microwave Technology Chalmers University of Technology Goteborg, Sweden It" ; ~ ABSTRA.cr . " The influence of HFET layout and via holes on the feedbaek capacitance of passive

Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers Kathiravan Krishnamurthi, Robert G. Harrison Dept. of Electronics, Carleton University, Ottawa, K1S 5B6, Canada. , Chris Rogers, John Ovey Philips Microwave, Hazel Grov~, Stockport, SK7 5BJ, UK. Svein M. Nilsen , SensoNor, PO Box 196, N-3192, Horten, Norway. Mohammed Missous Solid-State Electronics Group, EE Dept,