EFFECTIVE DIELECTRIC PEoRMITTIVITY OF r-CUT SAPPHIRE MICROSTRIP I.B.Vendik*, O.G.Vendik*, S.S.Gevorgian Chalmers University of Technology, Goteborg, S-41296, Sweden, *permanent address: Electrotechnical University,St.-Petersburg, 197376, Russia . ABSTRACT The effective dielectric constant of a microstrip is given as a function Of the strip geometry and its orientation on the surface of the subs

CAD Modelling and Characterization of a Superconducting Planar Microwave Resonator Using Complex Conductivity Measurements C.Delabie, F.Mehri, D.Chauvel, D.Chambonnet*, C.Belouet*, IC.Carro, Y.Crosnier Universite de Lille 1, IEMN - UMR CNRS 9929 Avenue Poincarre - BP 69 - 59652 Villeneuve d' Ascq Cedex - France *Alcatel Alsthom Recherche, route de Nozay - 91460 Marcoussis Abstract This paper prese

Signal Propagation in Conductor-Backed Superconductor Coplanar Waveguides Shujun Xiao and Ruediger Vahldieck' Laboratoryfor Lightwave Electronics, Microwave and Communications (LLiMic) Department 1, of Electrical and Computer Engineering . University of Victoria, MS 8610! Victoria, B.C, Canada VBW 3P6 ' ' A.b.5.11:.ad.i. ransient propagation of Gaussian pulses on superconductive conT ductor-

BROADBAND MICROWAVE MEASUREMENTS OF ARTIFICIAL CHIRAL MATERIALS AND ANALYSIS A Sihvola, I Lindell Electromagnetics Laboratory of the Helsinki University of Technology Otakaari 5 A, 02150 Espoo, Finland M Oksanen Uniscience Ltd, Dipoli, 02150 Espoo, Finland A Hujanen Technical Research Center of Finland, Information Technology, Telecommunications Otakaari 7 B, 02044 VTT, Finland ABSTRACT This pre

On the Resonant Behaviour of Chiral Materials Gerald Oberschmidt, Arne F. Jacob Institut fur Hochfrequenztechnik, Technische Universitat Braunschweig P.O. Box :3:329,:3802:3Braunschweig, FR Germany, Fax No.: 49 531 391 5841 Abstract Using a method to model complex materials in the long-wavelength limit, the resonant be- haviour of chiral media was analysed for different parameters of the thin

Thinfilm Multilayer Technology for Microwave Applications O. Ferling, H. Richter Alcatel SEL Research Centre, Oep. Microsystems ZFZJWM, Lorenzstr. 10, 0-70435 Stuttgart, Germany, Phone: +49 711 821 4159, Fax: +49 711 821 4911 ABSTRAQT ' Cost reduction and increase of performance and packaging density are the main goals for development of new RF-systems. These goals can be achieved by use of thi

DESIGN, FABRICATION, AND PERFORMANCE OF MONOLITHIC DIELECTRICALLY SrABILIZED PM-HFET,OSCILLATORS UP TO 60 GHZ ~', U. Gottich* and J. Wenger* Deutsche Aerospace AG.,SedanstraBe 10l D-89077Ulm, Germany, - Daimler-Benz AG., Re~eareh Center, Wilhelm-Runge-Str. 11. D-89081 'JIm, G~rmany, ' ~'" . . . . Monolithic HFET dielectrically stabilized oscillators (DROs) are designed based on results obtained f

MODELLING OF O.15J.1m DUAL GATE PM-HEMTs BY USING EXPERIMENTAL EXTRACTION D. Langrez, E. Delos, G. Salmer IEMN - DHS - UMR CNRS 9929 - Cite Scientitique Avenue Poincare - B.P. 69 - 59652 VILLENEUVE " D'ASCQ CEDEX - FRANCE : 20 19 78 93 Abstract- In this paper are presented some new experimental results concerning 0.15 µm dual gate PM-HEMTs obtained by using a new method of characterization.

CRYOGENICALLY COOLABLE HEMT AMPLIFIERS IN THE FREQUENCY RANGE 2-45 GHz R Mattes, M. Pilz Max-P1anck-InstitutfUrRadioastronomie,Auf clemHilge169, 53121 Bonn, Germany Abstract The design and performance of cryogenically coolable HEMT amplifiers in the frequency range from 2 GHz to 45 GHz is presented. Noise temperatures of 15 Kat 15 GHz, 30 K at 32 GHz and 35 K at 43 GHz have been achieved. A semi-

Miniaturising of K-Band Coplanar MMIC-Amplifiers by Using Lumped Elements Y. Kalayci I, R. Tempel I, B. Hopll, J. J. Borkes 2, R. Griindler3, and I. Wolff I.2 1Institut fUrMobil- und Satellitenfunktechnik. Moerser Str. 316, D-47475 Kamp-Lintfort,Germany,Tel: +49-2842-911-0,Fax: +49-2842-911-100 2Gerhard Mercator University of Duisburg Bismarckstr. 81, D-47048 Duistiurg,Germany, Tel: +49-203-3789-2