Modelling of operating point non linear dependence of Ids characteristics from pulsed measurements in MESFET transistors T.Fernandez, Y. Newport, J.M. Zamanillo, A. Tazon, A. Mediavilla Department of Electronics - University,of Contabria - Spain Abstract This paper presents a large signal MESFET model suitable for applications in nonlinear microwave CAD. The originality of this work lies in t

Broadband 40 GHz Si/SiGe HBTequivalent circuit using a successive analytical model parameter extraction L. Macho Cachol, A. Werthof and G. Kompa2 1 University of Cantabria, Spain, work performed 01 Kassel University 2 University of Kassel, Dept. of High Frequency Eng., Wilhelmshoher llee 73, DW-3500 Kassel,Germany A Abstract This paper presents a successive analytical HBT parameter extraction me

Modelling the gate capacitances of MESFETs and HEMTs from low-frequency C-V measurements Vicentiu I. Cojocaru and Thomas J. Brazil Microwave Research Group, Department of Electronic & Electrical Engineering. University College Dublin, Dublin 4, Ireland. Tel: +353-1-706 1908, Fax: +353-1-283 0921, E-mail: vivi-hertz.ucd.ie Abstract A novel modelling technique is presented to describe the gate capa

Direct extraction of noise sources for MESFET's and HEMT's B.Byzery Laboratoires d'Electronique Philips/Philips Microwave limeil 22, Avenue Descartes- 94453 limeil-Brevannes Cedex, France Tel. 1.45.10.68.85Fax 1.45.10.69.53 Abstract The purpose of this paper is to present a simple and direct technique (direct means no optimization or assumption) to determine the noise sources from scattering para

Microwave pulsed high power measurement space making use of resistive sensors M. Dagys, Z. Kancleris, R. Simniskis, Microwave Laboratory, Semiconductor Physics Institute, Gostauto 11, Vilnius 2600, lithuania, TEL.+370 2 619808, FAX: +3702627123 in a free M. Backstrom, U. Thibblin, B. Wahlgren Environmental Engineering Department, 5MB Military Aircraft, Saab-Scania AB, linkoping S-581 88, Sweden,

Characterizations of field effect devices in V band J.F. Kruck, G. Dambrine, A. Cappy Institut d'Electronique de Microelectroniquedu Nord et U.M.R. CNR.S. N° 9929 Departement Hyperfrequences et Semiconducteurs b6timent P4 Universite des Sciences et Technologies de Lille 59655 VILLENEUVED'ASCQ CEDEX TEL. (33) 20436761, FAX. (33) 2043 65 23 Abstract The successful design of linear microwave integrat

The in-fixture calibration procedure line-networknetwork-LNN Holger Heuermann and Burkhard Schiek * * Institutfur Hochfrequenztechnik, Ruhr-Universit6tBochum, 44780 Bochum,Germany.Tel.:+492347006497; Fax +49234 7094 167 Abstract This paper presents an alternative method for a network analyzer calibration, in particular an in-fixture calibration. It avoids de-embedding of the device under test an

Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifier G. David., s. Redlich., w. Mertin+, R.M. BertenburgO, s. Koblowski, F. J. TegudeO, E. Kubalek+, and D. Jager. Universitdt Ouisburg, Sonderlorschungsbereich 254 *FG Optoelektronik, Kommandantenstrabe 60, D-47048 Duisburg, F.R.G. +Werkstolfe der Elektrotechnik, Bismarckstrabe 81 , D- 47048 Duisburg, F.R.G. °

High speed automated system T. Fernandez, Y. Newport, J.M. Zamanillo, A. Mediavilla, A. Tazon Department of Electronics Castros - pulsed I/V measurement University Contobria - Avda. Los of SIN 39005 Santonder- Spain. Tel +34-42-201490, Fox +34-42-201402 Abstract Thermal and trap effects in GaAsMESFETand HEMTdevices can be accurately studied using Pulsed Gate and Drain measurement systems. M

A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors J.P. Teyssier, M. Campovecchio, c. Sommet, J. Portilla, R. Quere IRCOM CNRS URA n0356 Universite de Limoges (FRANCE) 7 rueJules Valles 19100 BRIVE Abstract A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup