Performance of broadband adaptive digital beamforming in communication Fengzhen Wang, John Litva, and Titus Lo Communication Research Laboratory, McMaster University, Hamilton, ON. Canada L8S 4K 1 FAX1416) 521-2922 Abstract In this paper the bandwidth performance of a broadband adaptive array is investigated. We carry out simulations based on a linear array with K elements, where each element is

Advanced satellite broadcasting Japan's R&D satellite COMETS Aiichiro Tsu%uku, Hajime Fukuchi, and Mitsugu Ohkawa Communications esearchLaborotory, 4-2-1 Nukuikita-machi, R Koganei-shi, Tokyo, 184 Japan. Tel:+81-423-27-7556 423-27-6674 Chiharu Ohuchi and Hisashi Morikawa National Space Development Agency of Japan, 1-29-6 Hamamatsu-cho, Minato-ku, Tokyo, 105 Japan Abstract The Communications Resear

MODFET technology statistical optimization for MMICs using microwave characterization Jurgen Braunstein, P.J. Tasker, A. HUismann, K. Kohler, G. Kaufel, and M. Schlechtweg Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, D-791 08 Freiburg, Germany Phone +49-761-5159-534, Fox +49-761-5159-400 e-mail braunstein-ialfhg.de Abstract 77 GHz LNAs and TWAs operating from DC to 80

Novel microwave M.R. Moazzam negative resistance Deportment of Electrical Engineering and Electronics, Brunei University, xbridge,MiddlesexUBB 3PH, U.K. U Abstract Two novel structures to produce negative resistance for general purpose use in microwave circuits are presented. The first structure produces high value negative resistance over a narrow band. The second negative resistance structur

Super-low-noise model HEMT based on new HEMT noise Kazukiyo Joshin, Tatsuya Ohori, and Masahiko Takikawa Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi 243- 01, JAPAN Tel. +81 462 48 3111; Fax +81 462 48 3672; e-mail joshin - flab.fujitsuco. ip Abstract Using a two-dimensional device simulation, we clarified why HEMT's have a superior low-noise performance. The new HEMT noise mo

EHects of gate recess depth on very high performance O.1 mm GaAs MESFET's Karen E. Moore, Jack R. East, George I. Haddad, Tim Brock Center for High Frequency Microelectronics Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2122. Tel: (313) 763-6132 or (313) 747-1781 (Fax) Abstract 0.1µm gate length conventional GaAs MESFET's have been fabricated with a wide ran

A modified Gummel-Poon model applied to HBTs Fatima S. Correra* and Saied TadayonU * Universidadede S60 Paulo,Cx. P 8174, CEP01065-970 S60 Paulo, SP, Brazil Tel.:+55 118146800; FAX:+55118154272; e-mail: fscorrer-lme.poli.usp.br *COMSAT Laboratories, Clarksburg, * MD 20871 Abstract The Gummel-Poon model implemented in commercial simulators was modified to generate a large-signal model for HBTs

Personal mobile communications in microwave band Yuii Kitahara NEC Corporation,Mita KokusaiBuilding,Annex, 1-4-28, Mita, Minato-ku, 108, Tokyo,Japan Tel 03-3798-9956, Fax 0337989967 Abstract The mobile communications technologies have been extremelyevolved during the past few years. The various types of mobile communications services such as mobile telephone, paging, teleterminal and so-on are

Advances in the optical heterodyne Masayuki Izutsu reception Faculty of Engineering Science, Osaka University, Toyonaka, * Osaka 560, Japan Tel + 81 6844 1151 Ex. 4592, Fax + 81 68577664, izutsu-ee.osaka-u.ac.jp E-mail Abstract The prospects for the use of optical heterodyne reception in signal transmission, distribution, and other possible applications will be asserted and their features will