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RADAR POTENTIALS INTEGRATED IN NETHERLANDS OLYMPUS PROPAGATION STUDIES
Nieuwkerk L.R., Ligthart L.P., Luyten G.J.H.
RADAR POTENTIALS INTEGRATED IN NETHERLANDS OLYMPUS PROPAGATION STUDIES L.R. Nieuwkerk, L.P. Ligthart, G.J.H. Luyten ABSTRACT Using a new type of weather surveillance radar, rain reflectivity measurements are performed in an area around Delft, .the Netherlands. In addition, data from the 12 and 30 GHz O1ympus satellite beacon, from radiometers and from rain gauges at several locations in th
THE OLYMPUS RADIOMETER FOR 12/20/30 GHz AT EINDHOVEN UNIVERSITY OF TECHNOLOGY
Dijk J., van Gastel A.H., Stal B.
THE OLYMPUS RADIOMETER UNIVERSITY OF TECHNOWGY FOR 12/20/30 GHz AT EINDHOVEN J. Dijk* (Speaker), A.H. van Gaster, B. Star ABSTRACT The EUT radiometer system has one antenna of a beam waveguide type consisting of a multifrequency scalar horn and four reflectors. The 20/30 GHz radiometers operate according to the Dicke principle, the 12 GHz radiometer follows the total power principle. The tem
THE RELATIONSHIP BETWEEN CROSS-POLAR DISCRIMINATION AND ATTENUATION AT 12.5, 20 AND 30GHz OBTAINED FROM OLYMPUS MEASUREMENTS CARRIED OUT AT THE BRITISH TELECOM RESEARCH LABORATORIES
Howell R.G., Thompson P.T.
THE RELATIONSHIP BETWEEN CROSS-POLAR DISCRIMINATION AND ATTENUATION AT 12.5, 20 AND 30GHz OBTAINED FROM OLYMPUS MEASUREMENTS CARRIED OUT AT THE BRITISH TELECOM RESEARCH LABORATORIES R.G. Howell1 and P.T. Thompson2 1 BT Laboratories: 2 BT Worldwide Networks ABSTRACT An analysis of the relationship between cross-polar discrimination (XPD) and attenuation for rain is carried out using data at 1
SCINTILLATION AND DEPOLARISATION RESULTS FROM THE BELGIAN OLYMPUS EXPERIMENT
Vanhoenacker D., Matagne J., Vasseur H., Vander Vorst A.
SCINTillATION BELGIAN AND DEPOlARISATION RESULTS FROM THE Ol YMPUS EXPERIMENT 1 D. Vanhoenacker, J. Matagne, H. Vasseur, A. Vander Vorst ABSTRACT The "DAPPER" software from ESA to produce statistics is not available yet for HP computers. Hence, the effort in Belgium has been put on the correction, presentation and analysis of particular events. This paper emphasizes scintillation and depol
FADE DYNAMIC CHARACTERISTICS ON OLYMPUS 12.5 GHz LINK
Barbaliscia F., Perfetti R.
FADE DYNAMIC CHARACfERISTICS Francesco Barbaliscia and Renzo Perfetti . ON OLYMPUS 12.5 GHz LINK Fondazione Ugo Bordoni Viale Europa 190, 00144 Roma - Italy Abstract First data from the propagation experiments with the Olympus satellite have been analyzed at 12.5 GHz in Rome for a 18 months period, on an event basis. The dynamic characteristics of the attenuation due to rain are examined to ex
EXTRACTION OF LINEAR AND NON-LINEAR MESFET MODELS
Jastrzebski A.K., Davies A.
EXTRACTION OF LINEAR AND NON-LINEAR MESFET MODELS Adam K. Jastrzebski and Antony Davies. ABSTRACT The non-linear parameter extraction technique proposed in this paper gives both rapid convergence and consistency of the derived model. The technique has been used for the purpose of modelling R.F. on wafer probed as well as packaged devices. A novel method has been developed for the modelling of disp
MICROWAVE FET PARAMETER SENSITIVITY ANALYSIS BASED ON AN ACCURATE PHYSICAL MODEL
Atherton J.S., Snowden C.M., Richardson J.R.
MICROWAVE FET PARAMETER SENSITIVITY ANALYSIS BASED ON AN ACCURATE PHYSICAL MODEL John S. Atherton, Christopher M. Snowden, John R. Richardson ABSTRACT The sensitivity of FET parameters to variations in geometry and manufacturing tolerances is predicted and qualified using an accurate physical model. The simulated results are compared to a speciallly designed wafer of MESFETs containing a range of
CHARACTERIZATION OF MICROWAVE POWER FETS BASED ON PHYSICAL MODELS
Snowden C.M., Pantoja R.R.
CHARACTERIZATION OF MICROWAVE POWER FETS BASED ON PHYSICAL MODELS Christopher M. Snowden * and Renato R. Pantoja + ABSTRACf A physical model is used to accurately quantify the dependence of microwave performance and breakdown voltage of power FETs on device geometry and doping profile. The characterisation of double-recessed power FETs using physical models is presented for the first time in this
Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data
Root D.E., Fan S., Meyer J.
Technology Independent Large Signal Non Quasi-Static FET Models Construction from Automatically. Characterized Device Data David E. Root, 1 Siqi Fan, 2 and Jeff Meyer 2 ABSTRACT by Direct This paper describes a new, general and accurate, large signal GaAs FET model for nonlinear (e.g. harmonic balance) circuit simulation, its fast and unambiguous construction (model generation) by explicit calcu
A UNIVERSAL LARGE-SIGNAL EQUIVALENT CIRCUIT MODEL FOR THE GaAs MESFET
Brazil T.J.
A OHIVERSAL LARGE-SIGNAL EQUIVALENT CIRCUIT HODEL FOR THE GaAs HESFET Thomas J. Brazil* ABSTRACT A large-signal equivalent circuit model is developed for a GaAs MESFET which is intended to be "universal", i.e. valid for DC, small-signal and nonlinear operation over a very wide range of bias conditions. Novel features of the proposed approach include accurate sub-threshold modelling, and allowance
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