Design and Development of HEMT Low Noise Amplifiers in the 40 - 50 GHz band G. Corazza COM DEV Cambridge, ABSTRACT Two low noise amplifier modules were designed and developed, one based on a conventional HEMT (gate dimension: approximately .25 x l00µm) and one based µm on a pseudomorphic HEMT (gate dimensions: approximately .15µmx50µm).The devices were modeled for small signal operation and noise

MICROWAVE PERFORMANCE OF DUAL-GATE CASCODE MESFET AND HEMT DEVICES WITH HIGH GAIN AT LOW NOISE LEVELS J. Wenger*, P. Narozny*, H. Diimbkes*, J. SplettswBer+ and C. Werres+ ABSTRACT Quarter micron dual-gate MESFETs and pseudomorphic HEMTs connected as a cascode circuit have been fabricated and investigated. The devices exhibit a high output impedance and a very low feedback capacitance resulting

MICROWAVE NOISE BEHAVIOUR OF DOUBLE BARRIER RESONANT TUNNELLING DIODES Kwaspen, Th.G. van de Roor H.C. Heyker, ABSTRACf JJ.M. * A method to measure the noise properties of double barrier resonant tunnelling (DBRT) diodes is described. The noise figure and noise measure of (nonoscillating) DBRT devices were measured over the full positive and negative bias voltage range, in the 1-1.6 GHz frequ

THREEPORT NOISE CHARACTERIZATION Th. Sporkmann., I. Wolff' ABSTRACT The application of two port noise and S-parameter measurements to the 3-port characterization is presented in this paper. Measurements of three two-, and oneports are the fundament of the procedure. From there, the 3-port Sparameters and a 3-port noise characterization based on the correlation matrix. concept will be derived.

CALCULATION OF THREE-DIMENSIONAL PASSIVE STRUCTURES INCLUDING BOND-WIRES, VIA-HOLES AND AIR-BRIDGES USING THE SPECTRAL DOMAIN ANALYSIS METHOD T.Beas.andI. WoHr ABSTRACT A full-wave analysis method for the investigation of microstrip- and coplanar-structures including bond-wires, via-holes, gate-fingers and air-bridges is presented. For the first time spectral domain analysis technique is used t

IMPROVED ANALYSIS OF DIELECTRIC DIMENSIONAL FINITE DIFFERENCE RESONATOR COUPLING USING A THREE- METHOD Detlev Hollmann*. Steffen Haffa**. Werner Wiesbeck ** ABSTRACT The increased frequency limit for the application of dielectric resonators (DR) up to the millimeter-wave range enforces the requirement to accurately characterize dielectric resonators in microwave circuits. In contrast to the g

PROPAGATION CONSTANT AND METAL-INSULATOR-SEMICONDUCTOR ELECTROMAGNETIC TRANSMISSION FIELD LINES DISTRlBUTION OF T Ma.eser*, G Mrozynski*, W John** ABSTRACT An efficient technique for calculating the electromagnetic fields of metal-insulator-semiconductor (MIS) transmission lines is presented. MIS transmission lines with typical dimensions of integrated circuits are analysed. In dependence t

ANALYSIS OF THE DISCONTINUITY BETWEEN RIDGED AND RECTANGULAR WAVEGUIDE BY AN EFFICIENT MODE-MATCHING TECHNIQUE G.G. Gentili--, M. Politi-, R. Maffia, G. Macchiarella-, A. Melloni- ABSTRACT A modified mode-matching technique is proposed to analyze the transition between a rectangular and a ridged waveguide (with multiple ridges). The techique integrates in an efficient way the computation of TE/TM

AN IMPROVED SECOND ORDER RADIATING BOUNDARY CONDITION FOR USE WITH NON-UNIFORM GRIDS IN THE FINITE DIFFERENCE TIME DOMAIN METHOD Elizabeth M. Daniel and C. J. Railton1 ABSTRACT Mur's second order Radiating Boundary Conditions were developed for use with uniform grids in homogeneous media only. This paper shows that the algorithm can be adapted for use with non-uniform grids and inhomegeneous medi

FULL WAVE ANALYSIS OF MICROWAVE TRANSMISSION LINES AND WAVEGUIDING STRUCTURES EMPLOYING A FINITE ELEMENT SELF-ADAPTIVE MESH TECHNIQUE Magdalena Salazar-Palma*, Felix Hernandez-Gil** ABSTRACl A self-adaptive mesh technique is presented for the finite element (FEM) full-wave analysis of microwave transmission lines and waveguiding structures. It provides an accurate FEM program with automatic