A New Approach to Nonlinear of MESFETs Hanly and Modelling MODFETs and Simulation by SIedzik and Ingo Wolff ABSTRACT: A new method for the derivation of a PET-equivalent-circuit for large- and small-signal applications is presented. The model consists of nine bias-dependent intrinsic elements additionally eight linear extrinsic elements. All circuit-elements are determined from measured DC-

PET MODELLING USING AN ANALYTIC S-PARAMETER F. Line EXTRACTION METHOD BASED ON BROADBAND MEASUREMENT G. Kampa and ABSTRACT A fully analytical model parameter extraction with respect to microwave FET devices is under investigation using only "hot" scattering parameters over a wide frequency bandwidth. The stability of the proposed extraction algorithm 1s tested. Some preliminary extracted re

A DIRECT CAD METHOD: MICROWAVE TUNING VARACTORS~ DESIGN AND ANALYSIS A Tichy-Racs, K Kazi* ABSTRACT This paper describes a direct design method for microwave tuning varactor with Schottky contact, developed to realize a small relative tuning on a parallel LC circuit with a varactor diode. The method can be applied either to design/reproduce the doping profile in the varactor structure

MICROWAVE ON-WAFER BARRIER DIODES R W Vogel* ABSTRACT CHARACTERIZATION AND MODELLING OF SCHOTTKY A simple method is described to determine the equivalent circuit of the forward- and reverse-biased Schottky diode. The parameters of the circuit can be extracted from S-matrix measurements carried out in a relatively wide frequency range (90-18090 MHz) with the use of the Cascade probe station and

AN EFFICIENT DEVICES TECHNIQUE FOR THE SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR J. C. A. Santos, M. J. Howes and C. M. Snowden* ABSTRACT A fast and efficient technique for the small-signal analysis of semiconductor devices from physical simulations is presented. Small-signal parameters are obtained by the use of the Sinusoidal Steady-State Method. The new technique reduces the order of t

THE ANALYSIS OF RESONANCE PHENOMENON IN DIELECTRIC BODIES USING THE DISCRETE SOURCE METHOD Ju.A. Eremin * , A.G. Sveshnikov ** Abstract. We consider the problem of developing an efficient numerical technics for solving the problem of resonance phenomenon in electromagnetic wave scattering by dielectric bodies. The discrete source method is used, and its main points are formulated. A resonance abs

THE APPLICATION OF THE IMPEDANCE TYPE BOUNDARY CONDITIONS TO THE DESIGN OF DIELECTRIC AND PLANAR RESONATORS A.M.Lerer * ABSTRACT Impedance-type boundary conditions on a dielectric layer are suggested to be applied to boundary problem of parameter calculation for disc-shaped dielectric resonators on a dielectric substrate and for planar metallic resonators on restricted dielectric substrate. The hi

EXCITATICN OF QJASIOPTICAL RI!S:NA'lOR WI'IH axJ.PLED PARALLEL-PLANE WAVEmIIE3 CN A MIR1DR BY GONN DIODE B M fu.1gakov, ABSTRACI' M P Natarov, V N Skresanov, A I Shoob1y . A novel quasioptical resonator system for solid state oscillators suitable for near-millimeter waves range is proposed. Q-factor of the cavity about 10 was achieved. Effective excitation of the proposed resonator avstem by

NUMERICAL ANALYSIS OF THE QUASI-OPTICAL COLLOCATION WAVEGUIDE RESONATOR USING A.I.Kleev, Institute 117973, A. V. Tihomirov for Physical USSR. Problems TECHNIQUE of the USSR Academy of Sciences, Moscow, Kosygina 2, ABSTRACT. The method for calculation of the modes of the open quasi-optical resonator with cylindrical mirrors and internal waveguide with impedance walls is suggested. The n

APPLICATION OF THE EQUIVALENCE ELECTRIC-LOADED CAVITIES PRINCIPLE TO THE ANALYSIS OF DI- A. Jostingmeier*, A.S. Omar** ABSTRACT The method presented here determines the electromagnetic resonances of dielectric-loaded cavities. The shape of the cavity is arbitrary and it may contain an arbitrarily shaped dielectric body of spatially independent permittivity. This method makes use of the anal