THE IMPORTANCE OF MUTUAL COUPLING IN THE ANALYSIS OF FINITE ARRAYS OF RECTANGULAR APERTURES C.G.Parini 1 and D.Kitchener 1 ABSTRACT The paper describes the theoretical analysis of the radiation characteristics of a finite array of rectangular horn apertures including the effects of mutual coupling. Results are presented for a square array of 25 elements demonstrating the importance of the mutual

POLAHIZATION RECTANGULAR M Mongiardo A bstt"ad It is known rectangular DEPENDENT WAVEGUIDE COUPLING RADIATORS. 01<' TWO FLANGE MOUNTED * and T. Rozzi** that a noticeable polarization "squint" takes place in a small array of flange waveguide radiators. Cross-polarization (i.e. coupling of the Ey polarized mounted incident field with Ex is present even in a single waveguide radiator in ord

SHAPING THE B-PLANE PATTERN OF A PYRAMIDAL BORN R APPLEBY, A B LE'l'TING'l'ON * ABSTRACT The effect of loading the E-plane of a pyramidal horn with a thin metal plate is examined both theoretically and experimentally. A model using aperture field integration extended to include reflections from the walls of the horn and the plate was developed and gave a good fit to experimental data. The far

A Broadband A. Haal * and U.Kazaku Ahstr8ct The bandwidth of a circular introducing ridges coaxial cutoff presented Coaxial Ridged Horn Antenna ora rectangular waveguide can he enhanced by the the into the waveguide. In this work, ridges Simple formulae ridge are introduced into are given set to calculate of waveguide with the same intention. frequencies for the of cutoff the coaxial wav

PLANAR BURNOUT DOPED BARRIER DIODES OVER SI OFFERING AND GaAs IMPROVED SCHOTTKY MICROWAVE DIODES PERFORMANCE I. Dale,* S. Neylon,* A. Condie,* M. J. Kearney**. ABSTRACT Planar Doped Barrier (PDB) diodes have recently been developed from MBE grown GaAs material, with extremely low barrier heights and highly asymmetrical I-V characteristics. The paper reports upon the microwave burno

A HIGH-EFFICIENCY POVER FET FABRICATED USING CO-IMPLANTATION AND A SELF-ALIGNED GATE Arthur Geissberger, Polhamus Matt Balzan, Inder Bahl, Edward Griffin and William ABSTRACT We discuss the design, fabrication and measured RF performance of fully planar, refractory, self-aligned gate (SAG) power FETs. The FET active channels are formed by direct ion-implantation into substrate. The perfo

HIGH POWER AND HIGH EFFICIENCY GaAs FETs IN C BAND S.Sakamoto*, T.Sonoda*, Y.Ikeda**, N.Kasai*, T.Sakayori* S.Igi*, H.Yamanouchi*, S.Takamiya* and Y.Kashimoto* ABSTRACT An internally matched high power and high efficiency GaAs FET combined with four FET chips has been developed with an output power of 20 W (PldB) and 3~ % power-added efficiency around 4 GHz. This excellent result was achieved main

A Comparison of the GaAs MESFET and HBT for Power Microwave Amplification Stephen I. Long 1 ABSTRACT A comparison of the GaAs MESFET and AIGaAs/GaAs single heterojunction bipolar transistor (HBT) for CW microwave power amplification has been carried out by theoretical analysis and simulation. The thermal resistance and therefore the device operating temperature is significantly higher for the HBT

HIGH EFFICIENCY PULSED GaAs-PIN-DIODES AT MILLIMETRE-WAVE FREQUENCIES S. Huber* ABSTRACT MBE-material is used to fabricate GaAs PIN avalanche-diodes for millimetre-wave applications. The rf-measurements are carried out under pulsed condition. Maximum output power of 15 W and maximum efficiency of 11.1 % could be realized at V-band frequencies. 

COMBINED DISCRETE/NORMAL .+ STATISTICAL MODELING OF MICROWAVE DEVICES J.W. Bandler . . .+ .+ . .'+ , R.M. BIernackI, S.H. Chen, J.F. Loman, M.L. Renault and Q.J. Zhang ABSTRACT This paper deals with statistical characterization of the equivalent circuit parameters for microwave FET devices. The statistics are derived from the S-parameters measured for a sample of devices. The use of a mult