A HIGH ISOLATION DC TO 18 GHZ PACKAGED MMIC SPDT SWITCH A. Ezzeddine, R. Pengelly and H. Badawi* ABSTRACT An high isolation MMIC GaAs SPDT switch was designed using a travelling wave configuration to achieve a very broadband performance from DC to 18 GHz. The SPDT switch die measurements give less than 2.5 dB insertion loss at 18 GHz and a return loss greater than 12 dB over the full bandwidth in

A NOVEL MICROWAVE TRANSMISSION PHASE-SHIFTER J.Ph. COUPEZ - R.A. PERICHON ABSTRACT A novel transmission voltage controlled phase-shifter is presented. The principle of this phase-shifter consists of a MESFET and varactor-diodes association. Basic operation, low frequency analysis, practical implementation and measured results are described. 

PREDISTORTION LINEARISATION OF AMPLIFIERS FOR UHF MOBILE RADIO R.D. Stewart1 and F.F. Tusubira2 ABSTRACT Predistortion introduced to correct for amplifier nonlinearity is a technique well known in principle, but its application has been restricted to relatively expensive high power amplifier installations. Small cells for FM and TDMA mobile communications systems require linear transmitter a

N-WAY Inder MMIC J. REDUNDANT Bahl*, SWITCH Edward L. Griffin* & David A. Willems.. ABSTRACT A novel approach to provide redundancy in an N-Way MESFET Switch has been invented and realized with monolithic microwave integrated circuit technology. This switch circuit uses series and shunt FETs configured in a manner to prevent failure of the switch even if several FETs fail. For example a SPDT

The Use of Double Cazauxt, Heterojunction Dimitris Pavlidis, Diodes Geok-Ing in Monolithic Phase Shifters 1 Jean-Louis ABSTRACT Ng and Marcel Tutt Double Heterojunction Diodes are studied theoretically and experimentally and show improved capacitance ratios typically of the order of 7 over MESFET technology. A monolithic T-phase shifter has been built using this approach and good phase s

and A HEMT Monolithic Double 1 Wide Dynamic Range Jean-Louis ABSTRACT Cazauxt, Dimitris Channel Attenuator with Broadband Characteri8tica Pavlidis, Geok-Ing Ng and Marcel Thtt Double Channel HEMT's are used as variable resistor elements in a bridged- T attenuator with broadband characteristics (0.5-12GHz), and wide dynamic range (12-16dB). A small insertion loss (2.8dB minimum) is obtain

High-Speed Fluctuation GaAs 1/8 Dynamic Frequency Divider and its Phase Noise Characteristics Stabilized for Supply Voltage Masafumi Shigaki., Tamio Saito., Hiroyuki Onodera .., Hirosi Kurihara. ABSTRACT A new GaAs 9.6 GHz 1/8 dynamic frequency divider with 1 µm long gate FETs has been developed. This divider is consists of a 1/2 dynamic divider for the first stage, and 1/4 static d

ANALYSIS COUPLER OF ASYMMETRICAL INHOMOGENEOUS COUPLED-LINE DIRECTIONAL K. SACHSE* ABSTRACT The scattering matrix of asymmetrical coupled two-line structure in an inhomogeneous medium, terminated in a set of impedances which are equal to the characteristic impedances of the individual, uncoupled lines, has been derived in terms of the coupled-mode parameters. It has been proved that the str

IMAGE PARAMETER DESIGN MICROSTRIP FILTERS G. Bianchi+, R. Sorrentino*, OF PARALLEL COUPLED M. Salerno *, andF. Alessandri ABSTRACT. A design technique of parallel coupled microstrip filters is presented which allows the fabrication of filters with moderate and wide pass bands circumventing the realization problems of the conventional design approach. The method is based on the direct applicati

ACCURATE CHARACI'ERIZATIONOF COUPLED STUB IN AS~IC FINLINE AND REALIZATION OF BANDSTOP FILTER ANIMESH BISWAS* and BHARATHI BEAT** ABSTRACT This paper reports accurate characterization of a coupled stub discontinuity in asymmetric finline using the transverse resonance technique. The stub is in the form of a rectangular slot transversely coupled to the main slot of the finline. Using periodical