AN EXTENSION OF THE TRANSMISSION MICROSTRIP-MICROSLOT APPLICATOR. LINE MODEL FOR THE CHARACTERIZATION OF LEDEE R., PRIBETICH P., KENNIS P., CHIVE M. * ABSTRACT In this paper, we present a new approach for the modelisation of the microstrip-microslot applicator used for biomedical applications. This device offers a lot of advantages for these applications but its modelisation is very comp

NEW TYPE OF BROADBAND TERMINATION* H.Ashoka** and A.M. Khilla ABSTRACT A new type of very broadband non-grounded termination is presented. More than a decade bandwidth has been demonstrated theoretically. The termination uses no open circuted lines and is simple to fabricate. The performance of the new type of terminations is experimentally illustrated. 

HERMETIC SEALED MODULE TYPE l8GHz AMPLIFIER FOR SPACE APPLICATION T. Imatani, and * Y. Kazekami, * M. Nagase, A. Kamikokura * * , B. G. Forsberg ** ABSTRACT Design and configuration of hermetic sealed and approach to achieve high reliability presented. Reliability evaluation test results reported. l8GHz amplifier for space of fabricated are described, application is amplifiers ar

13-16 GHz MMIC LOW NOISE AMPLIFIER USING MOVPE HEMTs Ramesh PYNDIAH*, Alain DESWARTE*, Michel WOLNY*, Jean-Christophe MEUNIER* Abstract A two stage low noise Ku band MMIC amplifier using MOVPE HEMT's has been designed and fabricated. The HEMT' s developed in our laboratory have 1.5 dB noise figure at 15 GHz while the two stage amplifier exhibits 10.0 ± 2.0 dB gain with less than 3.0 dB noi

"D C '1D 8 Qfz: G5J!s N:IMW:H- * ABSI'RACl': We have developed a family of amplifiers. These FET technlogy. band. The typical reached at 2 dBm application example counter sensitivities ultra wideband, low power, single supply GaAs nonnally-off amplifiers are fabricated with the RTC Limeil digital enhancement mode Input and output VSWR's are low

BROADBAND LOW-NOISE MONOLITHIC GaAs MICROWAVE AMPLIFIERS WITH VERY LOW POWER CONSUMPTION. G.P.Donzelli, M.pillan, L.Scopelliti, E.M.Bastida ABSTRACT A new general design phylosophy for producing cost-effective GaAs MMIC's is described. As a particular application, the design and the test results for wide-band and low-noise amplifier chips with an extremaly low power consumption are reported and d

THE DESIGN OF LOW NOISE FEEDBACK AMPLIFIERS POWER MATCH AND NOISE OPTIMIZATION Alan P..T. Teale, Michael J. Howes and John R. Richardsont ABSTRACT WITH SIMULTANEOUS INPUT The 3-Port Scattering and Noise parameters of a GaAsFET are measured. The noise measurement method is novel and is verified by good agreement between the measured 3-Port Noise parameters of a passive network and predicted nois

. FREQUENCY LIMITATION BY INTERCONNECTING IN WAFER SCALE INTEGRATION CIRCUITS J. Chilo, LINES Member IEEE, G. Angenieux ABSTRACT Propagation mechanism in Wafer Scale Integration (WSI) interconnection lines is more complex than in lines deposited on insulating substrates (like GaAs). The dielectric being multilayered (Air Si02 -Si), the propagating modes are hybrid. The properties of these mod

HYBRID Chumming MODE DIELECTRIC RESONATORS IN MICROSTRIP* Chen and Kawthar A. Zaki** ABSTRACT Rigorous analysis of nonaxially symmetric hybrid modes excited in dielectric resonators on microstrip substrates are presented. The analysis uses the mode matching technique and includes the complex modes, which may exist in the structure, to compute the resonant frequencies and field distributions.

A New Approach to the Analysis of Inhomogeneously Filled Cavities A.S. Omar and K. Schiinemann Abstract The technique filled which has been is Resonant are presented extended frequency to a in to [1] the and for the case analysis of of inhomo- geneously filled different the cavity waveguides inhomogeneously of the and resonators. modes field to configuration the eigenvalu