DIELECTRIC RESONATOR WIDE BAND TUNING CAVITY FOR HIGH PERFORMANCE FILTERS Authors: E. Marchionna, E. Martini, A. Panzeri* ABSTRACT Compared resonator the losses, wide band with the conventional featured and by cost, circular response, waveguide special irises but further filters the new type of dielectric in between insertion of the and filters dimensions tuning also screws and coupling

COMPUTER-AIDED DESIGN OF MECHANICAL OF A DIELECTRIC RESONATOR TUNING STRUCTURES SUBSTRATE ON MICROSTRIP Szymon Maj*, Adam Abramowicz*, Jozef Modelski + ABSTRACT Analysis of dielectric resonators mounted on microstrip substrate with tuning metal screw, tuning metal plate, and tuning dielectric disc has been presented. The radial mode matching method has been applied to calculate the resonant f

AN INTEGRA TED ANTENNA-MIXER AND MESFET LOCAL OSCILLATOR CIRCUIT Vincent D. Hwang* and Tatsuo Itoh* ABSTRACT A planar integrated receiver front end consisting of a coupled slot antenna, a Schottky diode balanced mixer and a MESFET local oscillator is described. The Schottky diodes are placed inside the half-wave coupled slot to form a planar antenna-mixer. This antenna mixer is fed by a MESFET loc



DESIGN AND PERFORMANCE OF RUGGED HIGH PERFORMANCE BROADBAND DIODE MIXERS FOR AIRBORNE APPLICATIONS O. S. A. TANG and ABSTRACT N. R. WATSON The analysis of the single diode quad ring mixer incorporating coupled suspended microstrip baluns and a 4-wire balanced presented. Design trade-offs and guidelines are presented. results of multi octave, highly rugged, high performance up/down converters fo

STANDARD PLANAR BIASABLE MIXER FOR SPACE TELECOMMUNICATIONS J.M. Goutoule - J. Bulgarelli* ABSTRACT The standardisation of Space Telecommunication equipments, and particularly of the receivers, requires double balanced mixers with overlapping frequency bands on the three ports. This paper deals with a mixer based on a multioctave hybrid tee using coplanar lines and slot-lines. The mixer design

0.8 TO 18.0 GHz HYBRID pm MESFET AND HEMT DISTRIBUTED AMPLIFIERS USING 0.25 X 200 Yasushi ITO ABSTRACT 0.8 to 18.0 GHz hybrid distributed amplifiers have been realized using 2 FETs with 0.25 X 200 micron gate. One amplifier, using two 0.25 X 200 micron MESFETs, exhibits 5.0 ~ 0.3 dB of gain, less than 6.2 dB of noise figure. The other amplifier, using two 0.25 X 200 micron HEMTs, exhibits 7

THEORETICAL AND EXPERIMENTAL CHARACTERISATION OF A TRAVELLING-WAVE FREQUENCY DOUBLER USING GENERALISED VOLTERRA SERIES REPRESENTATION V. Krozer*, K. Fricke*, H.L. Hartnagel* ABSTRACT Applying the generalized Volterra series approach we have analyzed a four-port frequency doubler. With this new analysis technique it has become possible to determine the influence of several distinct circuit pa

SEMICONDUCTOR STRUCTURES FOR 100 GHz SILICON IMPATT DIODES J.F. Luy E. Kasper W. Behr ABSTRACT Single Drift double drift and quasi Read double drift (QRDDR) silicon IMPATT diodes for CW operation are compared. It is shown that for high power generation efficient semiconductor structures have to be developed. A theoretical design study predicts an efficiency of 14.1 % for the QRDDR diode at 9

IMPROVED LINEARITY OF MESFET AMPLIFIERS WITH OPTICAL ILLUMINATION T. Berceli and A. Chapman ABSTRACT In many applications, the linearity of microwave amplifiers is a very important property. The optical illumination of MESFET amplifiers can be used for improving the linearity. Our recent investigations show that the application of a proper termination at the gate-source port for the light i