The conception and realization of an experimental radar 94 GHz have necessited the study and fabrication of silicon able to protect the reception channels in the presence of power. This article describes the method of approach and the these limiters. for ecartometry at PIN diodes limiters 1 kW peak incident results obtained for 

Ferrite latching phase shifters in a generalized waveguide geometry (grooved rectangular guide with lateral ridges) are analyzed using a combination of mode-matching and variational techniques. By this method, the double transverse inhomogeneities of the waveguide configuration and of the toroid corner magnetization are both considered exactly, leading to accurate predictions of differential phase



A phase shifter which allows control of magnitude and phase applicable for mobile satellite reception is introduced. It consists of three amplifiers in parallel, each driven by a third of the incoming microwave signal. The phase difference between the three signal paths is 120 degree each. Magnitude and phase of the transfer function are determined by the gain of the amplifiers set by three bias v

Wide bandwidth waveforms, providing high range resolution, are becoming increasingly prevalent with the advent of diminiscing costs for signal processing. However, phased array radars that do not incorporate time-delay steering suffer dispersion loss and pulse broadening effects from wide bandwidth waveforms. This paper presents universal design curves for quantifying the effects of dispersion in

Seven commonly-used antenna array elements are compared. Two design equations per radiator are needed regardless of the element chosen. Selfimpedance and mutual-impedance characterizations differentiate the seven elements with respect to ease of design. At present, in the microwave range, the most precise designs occur with the use of waveguide-fed slots. Mutual coupling is a serious problem and c

A new technique for. the design of a microwave GaAs MESFET amplifier under large-signal conditions with the best compromise between output power and third-order intermodulation (IM3) distortion is described. It is based on the device nonlinear model which is used with the Volterra series to predict the large signal behaviour. Experimental verification is given for two MESFET X-band amplifiers with

A 18-26 GHz balanced amplifier in microstrip technology is presented. The amplifier stage uses only one FET having two 150 µm wide cells, each of them being connected in each path of the balanced stage. The module achieves a gain of 5 dB an input and output VSWR less than 2 : 1 and a noise figure less than 7 dB. 

This paper carries out experimental results amplifier on alumina substrate. This amplifier, using 8 FETs of 0.5 µm gate concerning distributed length fabricated at LEP exhibits 6 +- 1 dB gain over the frequency range 0.1 to 25 GHz. In this paper, we describe the design of such an amplifier and we discuss possibilities for further improvements in distributed amplification. 

The characteristics of low-noise amplifiers using various guiding structures have been investigated. A 0.15-0.20 dB improvement over the conventional microstrip amplifiers has been achieved at 48Hz with coplanar structures. Minimum noise temperatures of 45K and 10-12 K have been obtained at room and Iiquid nitrogen temperatures respectively. A two stage amplifier was realized at 198Hz exhtbiting a