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MULTI-TERMINAL POWER DIVIDERS COMBINING CAVITY AND STRIPLINE TECHNIQUE
L.J.P. Linner, G. Andersson
MULTI-TERMINAL POWER DIVIDERS COMBINING CAVITY AND STRIPLINE TECHNIQUE L. J. Peter Linner and Gunnar Andersson* ABSTRACT This paper deals with a method that combines a planar network and a waveguide cavity for use as a power divider. Experimental results for one such power divider with a centre frequency of 12.1 GHz and 15 output ports are presented.
INTERNALLY AND EXTERNALLY MATCHED LUMPED ELEMENT SYMMETRICAL 5 PORTS
G.P. Riblet
INTERNALLY AND EXTERNALLY MATCHED LUMPED ELEMENT 5 PORTS Gordon ABSTRACT P. Riblet* SYMMETRICAL A simple internally matched lumped element 5-port is proposed. It contains tiifferent lumped element circuits connecting adjacent and nonadjacent ports. Furthermore, it is shown how this simple lumped element circuit may be further broadbanded by including external matching.
BROADBAND MULTIPORT-COUPLER
M. Malkomes, H.J. Schmitt, G. Kadisch, M.V.D. Poel
BROADBAND MULTIPORT-COUPLER M. Malkomes, H.J. Schmitt, G. Kadisch, M.v.d.Poel ABSTRACT Results a of computer aided analysis of symmetrical 5-port micros trip-ring components with "de Ronde"-type inner coupling are presented. Optimized coupler designs employing internal and external matching technique show over one octave bandwidth, power balance within ldb and matching better than ~O dB. De
DESIGN PARAMETERS OF THREE COUPLED MICROSTRIPLINES
E.A.F. Abdallah, N.A. El-Deeb
DESIGN PARAMETERS OF THREE COUPLED MICROSTRIPLINES Esmat A.F. Abdallah+ and Nabil A. El-Deeb++ ABSTRACT The parameters of the general configuration of three coupled microstriplines are derived in terms of self and mutual static capacitances of the system in the filled and empty structures. These capacitances were computed by using the network analogue method. The mode impedances of the c
MICROWAVE FET OSCILLATOR DESIGN BASED ON LARGE-SIGNAL CHARACTERISATION
C.M. Snowden, M.J. Howes. D.V. Morgan
MICROWAVE FET OSCILLATOR DESIGN BASED ON LARGE-SIGNAL CHARACTERISATION Christopher M Snowden, Michael J Howes and D Vernon Morgan ABSTRACT A method of accurately designing microwave FET oscillators using a two terminal large-signal characterisation technique is described. Measurements are used to characterise a one-port microwave oscillator circuit in terms of admittance, frequency and s
A LOW-DRIFT OSCILLATOR STABILIZED BY A HIGHLY SENSITIVE DISCRIMINATOR
T. Otobe, Y. Komatsu, Y. Murakami
A LOW-DRIFT OSCILLATOR STABILIZED BY A HIGHLY SENSITIVE DISCRIMINATOR T.OTOBE, Y.KOMATSU, Y.MURAKAMI * ABSTRACT A low-drift oscillator stabilized by a highly sensitive discriminator which consisted of a dual-gate FET and a dielectric resonator (DR) is presented. The DR was used in common by both the oscillator discriminator. The temperature dependence of the oscillating was compensated by me
OSCILLATORS IN A HYBRID MICROSTRIP TECHNIQUE
A. Rendel, A.S. Omar
OSCILLATORS IN A HYBRID MICROSTRIP TECHNIQUE A. Rendel, A.S. Omar ABSTRACT Two oscillator prototype circuits were developed in a circuit technique which combines the advantages of microstrip technique and waveguide-below-cutoff technique. The prototypes can be equipped with Gunn- or Impatt-diodes and are suitable for multi-device operation. Broadband mechanical and electronical tunability is
PHASE-LOCKED MILLIMETER WAVE GUNN OSCILLATORS WITH LARGE MECHANICAL TUNING RANGE
M. Bester, K. Jacobs, B. Vowinkel
PHASE-LOCKED MILLIMETER TUNING WAVE RANGE GUNN OSCILLATORS WITH LARGE MECHANICAL M.Bester, K.Jacobs, and B.Vowinkel * ABSTRACT A new design for millimeter-wave Gunn oscillators has been developed, yielding a mechanical tuning range of about 15 GHz (70-85 GHz) and an output power up to 16 mW. The GaAs Gunn oscillator is tuned at the fundamental frequency (Q-band) in a crossed-waveguide r
STABILIZED FIN-LINE FET-OSCILLATORS
A. Jacob, C. Ansorge
STABILIZED FIN-LINE FET-OSCILLATORS A. Jacob, C. Ansorge ABSTRACT The design and realization of stable fin-line FET-oscillators is described. Several examples of fundamental mode oscillators through X-band and Ku-band are given. A Ka-band second harmonic FET-oscillator is reported.
LOW NOISE DESIGN OF DIELECTRIC RESONATOR FET OSCILLATORS
M. Camiade, A. Bert, J. Graffeuil, G. Pataut
LOW NOISE DESIGN OF DIELECTRIC RESONATOR FET OSCILLATORS M. CAMIADE (1) - A. BERT (1) - J. GRAFFEUIL (2) - G. PATAUT (1) ABSTRACT Experimental comparison has been made between different ORO circuits with FET's of various origins and size around 11 GHz. Details of the most pertinent conclusions explanations achieved of the observed results. are given together with theoretical A -105 dBc/Hz fi
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