A 180 KW L-BAND DISTRIBUTED SOLID-STATE TRANSMITTER Stephen R. Bird* ABSTRACT A 180 kW L-band distributed solid-state transmitter has been designed which uses 122 output modules distributed on the back of a phased array antenna. The l50o-watt modules utilize a new 600-watt short-pulse, high-peak power transistor. The overall transmitter design and resultant characteristics are discussed. 

A HIGH PERFORMANCE TACTICAL 3-D RADAR FOR THE 1980's K.F. Horenkamp and T.E. Keast* ~ ABSTRACT System design aspects of the Westinghouse TPS-70(V)X radar under current development are described. 

MICROWAVE SENSOR FOR SNOWPACK WETNESS AND DENSITI PROFILE MEASUREMENT Martti Tiuri, Ari Sihvola and Ebbe Nyfors ABSTRACT A microwave sensor for fast field measurements of snowpack wetness and density profiles is described. The sensor is an open resonator that can be pushed into snow. The resonant frequency (around 1 GHz) and the Q factor are automatically measured as a function of depth and

MEASUREMENTS OF THE DIELECTRIC FREQUENCY RANGE M. PROPERTIES OF SNOW IN THE -'..lfHGHZ ~ Hallikainen*, F.Jf. Ulaby**, M. Abdel-Razik** ABSTRACT Microwave dielectric measurements were ~ade on snow samples with wet- ness~s between 0 and 0.12 by volume and densities between 0.17 and 0.37 g/cm. A free-space transmission method was used at eight frequencies between 4 GHz and 18 GHz. The data a

THE MATCHING AND BIASING CIRCUITS MIC MICROWAVE FET AMPLIFIERS FOR BROADBAND V. PAUKER* ABSTRACT The objective 1. 2. 3. of this paper is to present: the biasing circuit, amplifier. simple broadband matching networks including a 2-8 GHz FET amplifier using such networks, an alternative solution for gate biasing in a balanced 

8 AND 11 GHZ BANDS LOW NOISE FET AMPLIFIERS OPERATING AT ROOM TEMPERATURE Tsutomu Hashimoto, Fumio Takeda, Toshio Nakazawa, Kiyoharu Seino ABSTRACT 8 and 11 GHz bands low noise FET amplifier operating at room temperature have been developed. Noise temperature of these FET amplifiers are 105 K and 185 K at 8 and 11 GHz bands, respectively. 

19 GHZ SUSYENDBD-LINE FE'2 M1PLIFIER I.Ang.e.lov .,A.Spasov .I.Stanchev .L.Urshev + ABSTRACT This invest.igat.ian ped .in the Sciences.The paper' describes the resul1;s,,<:>b:tained 'through the of an 1.8-19 GHz low-noise Insi1i tut.e of Electronics of amplifier will be used in of microwaves FE~ amplifier,develQ.'Bulg9-r-ian Academy of the experiment.s.cc!J;Dand the effect.s of nect..ed

CHARACTERISATION AND EVALUATION OF Ga As POWER MESFETS IN THE FREQUENCY RANGE 1.5 TO 12 GHZ. C.J. HEARNE, M. GIBSON.t * ABSTRACT Techniques for performance evaluation and characterisation of Ga As Power FETs for the purpose of assessing their suitability for space applications are discussed. These techniques were used to evaluate commercially available FETs at L, S and X band and to select suita

IMPROVEMENTS IN RECEIVER RF BURNOUT CHARACTERISTICS POST OVERLOAD DEGRADATIONS IN LOW NOISE GaAs FETs. H.J. Finlay and B~# Roberts* AND REDUCTION OF ABSTRACT To achieve optimum and reliable performance from GaAs FET amplifiers in radar and communication receivers, when RF overload is prevalent, requires a knowledge of RF burnout and post overload degradations. The identification of burnout mecha

GaAs MONOLITHIC 1 GHz VIDEO AMPLIFIER USING Ti/W SILICTDE GATE TECHNOLOGY Yukio Takeda, Masafumi Shigaki, Tnkeshi Takano, Yoshimasa Daido, and Katsuhiko SUYnma ABSTRACT A GaAs monolithic video amplifier is designed with the aid of computer simulation where FET parameters are determined by the dc and low frequency responses. GaAs monolithic IC chips are fabricated by self-aligned Ti/W