A 9 - 10 GHz 5 WATT GaAs FET AMPLIFIER
N. Fukuden, N. Ishiyama, Y. Arai
A 9
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10 GHz 5 WATT GaAs FET AMPLIFIER
Nobutoshi Fukuden, Naoyuki Ishiyama and Youichi Arai
ABSTRACT A high power GaAs FET amplifier with an output power of 5 watts in the X-band has been developed. Gain is more than 40 dB and the intercept point is plus 46.8 dBm. Four power GaAs FETs with a gate width of 7,200 microns are used in the final stage amplifier. The combining loss of the final stag