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A PRECISE METHOD OF PHASE SHIFT MEASUREMENT FOP LARGE MICROWAVE SYSTEM
L.-S. Yin
A PRECISE METHOD MICROWAVE Lian-shen ABSTRACT SYSTEM Yin* OF PHASE SHIFT MEASUREMENT FOP LARGE Presented in this paper is a precise approach of phase shift measurement for large microwave system, i.e. dual (or four) cables phase shift measurement method. This method overcomes two disadvantages of the modulated reflective wave method, and eliminates the error arising from phase variation due to
FM-CW MEASURING TECHNIQUE FOR TESTING WIDEBAND ANECHOIC CHAMBERS
L.P. Ligthart
FM-CW MEASURING TECHNIQUE FOR TESTING WIDEBAND ANECHOIC CHAMBERS L.P. Ligthart Abstract The Voltage Standing Wave Ratio and the Antenna Pattern Comparison methods are widely used for the determination of the reflectivity in anechoic chambers. In this paper a reflectivity measuring technique is described based on a transmitted signal with a linear frequency modulation over a large bandwidt
APPLICATIONS OF A TWIN OPEN RESONATOR SYSTEM
L.J. Auchterlonie
APPLICATIONS OF A TWIN OPEN RESONATOR SYSTEM: L.J. AUCHTERLONIE ABSTRACT The advantages and application of a twin open-resonator system in measuring frequency and small frequency intervals are described. An improvement in the tuning sensitivity and in the ease of adjustment is achieved by the controlled insertion of a thin dielectric sheet which provides vernier tuning. Application of the syste
IMPEDANCE MEASUREMENTS IN WAVEGUIDES BELOW CUTOFF
C. Schieblich, K. Schünemann
IMPEDANCE MEASUREMENTS IN WAVEGUIDES BELOW CUTOFF Christian Schieblich, Klaus SchUnemann ABSTRACT: A measurement set-up is described which is capable of measuring impedances in below-cutoff waveguides. Due to the strong attenuation of the fundamental mode, this circuit technique presents inherent difficulties to impedance measurements which are overcome by properly designing the probes and by
THE MATCHED SYMMETRICAL FIVE-PORT JUNCTION AS THE ESSENTIAL PART OF AN IDEAL SIX-PORT NETWORK
E.R.B. Hansson, G.P. Riblet
THE MATCHED SYMMETRICAL FIVE-PORT IDEAL SIX-PORT E.R.Bertil NETWORK and Gordon JUNCTION AS THE ESSENTIAL PART OF AN Hansson* P. Riblet** ABSTRACT The basic properties of consisting of a matched coupler,are described. advantageous properties The basis for analysis and it is demonstrated frequency bands by the line five-port shows a tically predicted one. measurements made with a novel configur
PHASOR ERROR CORRECTION USING AIR LINES WITH AUTOMATED SCALAR NETWORK ANALYZER
P. Lacy
REPRODUCIBLE HIGH POWER EFFICIENT TRAPATT OSCILLATORS FOR S-BAND
J.G. Summers, G. Tubridy, M. Pierrepont, S. Jones, M. Waller
REPRODUCIBLE HIGH POWER EFFICIENT TRAPATT OSCILLATORS FOR S-BAND J .G . Summers, * G. ~ Tu brl dy, +. M. PIerrepont, * S. Jones, + M. Waller + ABSTRACT New TRAPATT devices and circuits have been evolved for miniature solid-state transmitter applications. The devices, which are made by a low cost, high yield silicon planar technology process, are extremely rugged and generate high
A HIGH EFFICIENCY InP TRANSFERRED ELECTRON DEVICE FOR HIGH PEAK POWER, HIGH MEAN POWER SOURCES IN J-BAND
D.R. Brambley, D.C. Smith
A HIGH EFFICIENCY InP TRANSFERRED ELECTRON DEVICE FOR HIGH PEAK POWER, HIGH MEAN POWER SOURCES IN J-BAND D.R. Brambley, ABSTRACT D.C. Smith High efficiency indium phosphide transferred-electron pulsed devices have been shown to produce simultaneously high peak-powers and high mean-powers with d.c. to r.f. conversion efficiencies up to 22% at upper J-band frequencies. Single devices have produ
ULTRABROADBAND ELECTRONICALLY TUNABLE OSCILLATORS
J. Obregon, P.G. Marechal, Y. Le Tron, R. Funck
ULTRABROADBAND ELECTRONICALLY TUNABLE OSCILLATORS J. OBREGON - P.G. MARECHAL Y. LE TRON- R. FUNCK - ABSTRACT This paper describes tunable sources. the results obtained on two types of very broadband - A bipolar-varactor oscillator from 3 to 9,4 GHz. This result was circuit placed between the emitter The output power was 10 mW in the - A decade YIG spheres: has been designed showing a t
X AND Ku-BAND DUAL GATE MESFET OSCILLATORS STABILIZED USING DIELECTRIC RESONATORS
C. Tsironis, P. Lesartre
X AND Ku-BAND STABILIZED Christos DUAL GATE MESFET OSCILLATORS USING TSIRONIS DIELECTRIC RESONATORS and Paul LESARTRE ABSTRACT Stable X- and Ku-band oscillators have been realized using GaAs dual gate MESFETs with a geometry of 2 x 0.8 ~m x 150 ~m. Frequency stability was obtained by coupling the second gate with Ba2Tig020dielectric resonators. The design was accomplished by an experimenta
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