NEW MICROWAVE DETECTOR EMPLOYING Nb/GaAs SUPER-SCHOTTKY CONTACT S. Kataoka, Y. Sugiyama, M. Tacano, S. Sakai and Y. Komamiya* ABSTRACT A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a long life and very reliable characteristics with estimated detector current responsivity S 1500 V-I and NEP 1

THE DESIGN OF SCHOTTKY DIODES FOR MICROWAVE REGIME GH.GRADINARU and A.N.DOROBANTU ABSTRACT. A general method is presented to design microwave Schottky diodes for detection and mixing, based on correlations between imposed microwave electrical parameters and structural elements in various polarization and frequency regimes. Computer-drawn families of curves yield directly these correlations,



X BAND GaAs FET OSCILLATOR !!/! !/! LARGE SIGNAL DESIGN !/!!/!!/!!/! J. F. SAUTEREAU J. GRAFFEUIL K. TANTARONGROJ --ABSTRACT: We present of X band programm output GaAs IMAG power, a large signal time domain - P. ROSSEL theoretical time approach domain analysis FET oscillators, III. Experimental by means results, of a network and general equations for maximum are given. 

LARGE SIGNAL INSTABILITIES IN FET CIRCUITS T. Berceli ABSTRACT Instability problems due to nonlinear capacitances in FET circuits are discussed and criteria of stable operation are determined to avoid in-band and out-of-band spurious oscillations in power amplifiers and oscillators. Instability can be eliminated by applying appropriate impedance values and characteristics. 

NOVEL TWO-PORT MEASUREMENT TECHNIQUE ALLOWS POWER FULL MESFETs CHARACTERISATION OF GaAs Robert SOARES*, Michel GOUDELIS*, and Elias de Los REYES DAVO+ ABSTRACT An original measurement technique has been developed which permits full two-port characterisation of GaAs power MESFETs under non-linear signal drive conditions. Measurement results are presented showing the variation across C

A MULTI-STAGE 4-WATT MICROWAVE EQUIPMENT Othmar T egel AMPLIFIER WITH GaAs FET'S FOR A 5 GHZ ABST RACT Power amplifiers for microwave equipment for both analog and digital signal transmission can be realized with GaAs field effect transistors up to frequencies of approx. 15 GHz. More specifically, with commercially available devices which are derated to allow for high ambient temperatures, i

AN 8-12 GHz 1 WATT GaAs FET AMPLIFIER FOR TWT REPLACEMENT Youichi Arai, T. Sakane, Y. Aono and H. Sugawara ABSTRACT A high gain broad-band GaAs FET power amplifier was developed for TWT replacement. The amplifier outputs 1 watt at the 1 dB gain compression point, and has a qain of more than SA dB over the operating frequency range from R to 17. GHz. Designing a high power GaAs FET amplifie

HIGH VOLTAGE OPERATION OF POWER GaAs FET AMPLIFIERS Werner Vavken and Chi Hsieh * ABSTRACT This paper describes a 7 GHz GaAs FET power amplifier operating with -2lV D.C. power supply without DC-DC converter or voltage dropping resistor. The amplifier is to be used as a direct replacement of an Injection Locked Amplifier in a 7 GHz video microwave radio. Direct series connection of two power GaA

HYBRID MIC's FOR A 6 GHz PHASE LOCKED DIVIDER LOOP J. Noordanus, G. Meiling ABSTRACT The microwave part is described of a 6 GHz phase locked loop with direct division, consisting of a FET voltage controlled oscillator, a power splitter and two binary frequency dividers connected by coupling amplifiers. As microwave digital integrated circuits at 6 GHz are still in the research phase, hybri