MODE CONVERSION IN OBLIQUE BRAGG GRATINGS FOR INTEGRATED OPTICS N. GFEMILLET - G. THOMIN - J. MARCOU ABSTRACT High density component integration in guided optics needs reflecting devices. A holographic grating on the guide acting under Bragg conditions deviate the guided light. This reflexinn causes polarization changes so that a T.E. incident wave will give some T.M. reflected wave. Devices o

MODAL CHARACTERISTICS INTEGRATED OF DIFFUSED RECTANGULAR ANISOTROPIC WAVEGUIDES OPTICS Sario' DEVICES TO DESIGN M.N.Armenise~M.De ABSTRACT An investigation characteristics des a metallic layer of the required rectangular in several anisotropic integrated optical optics waveguide considered devices. modal inclu- is presented. The inhomogeneous structure The phase constant and the attenuati

ELABORATION CONTROL OF OPTICAL WAVEGUIDES WITH AN ACCURATE INDEX PROFILE OF THE REFRACTION G. CHARTIER, P. COLLIER, A. GUEZ, P. JAUSSAUD, W. STEICHEN (*) ABSTRACT: Glass is a good material for integrated optics, since the value and the gradient of its refractive index can be of the same order as in optical fibers, allowing an efficient coupling. The refractive index can be varied by exc

THEORETICAL AND EXPERIMENTAL STUDIES OF INDUCTIVE GRIDS. R.C. MC PHEDRAN and L.C. P. BLIEK and R. DELEUIL** D. MAYSTRE*** ABSTRACT. BOTTEN* We present a rigorous theory for the diffraction by inductive grids, having circular apertures placed in doubly-periodic fashion in a thick, perfectly-conducting screen. We compare the theory with measurements made at millimetric wavelengths, both for no

FREQUENCY TUNING OF TRAPATT OSCILLATORS USING FERRlMAGNETIC RESONATORS S R Longley and P L Booth ABSTRACT The fundamental frequency of a pulsed TRAPATT S-band oscillator on an alumina MIC has been tuned electronically by changing individually the loading of the second and third harmonic terminations. This was realised with modified YIG polycrystalline spheres, (to overcome limiting), semi

,LARGE SIGNAL CALCULATIONS OF SI, GAAS AND INP BARITT DIODE PERFORMANCES IN X AND Q BAND. A. VANOVERSCHELDE and G. SALMER X ABSTRACT The capabilities of Baritt diodes in the millimeter wave range and the effects of the electron velocity versus field dependence in GaAs and InP are investigated. The influences of doping profile and material parameters are analysed by means of an exact lar

TUNNEL INJECTION OSCILLATOR OVER 200 GHz K. Motoya*, Y. Okuno** and J. Nishizawa* ABSTRACT The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 A is suitable for the injection responsible above short millimeter wave where the impact ionization ceases to follow, because of the larger time consta



HIGH EFFICIENCY INDIUM PHOSPHIDE OSCILLATORS FOR PULSED APPLICATIONS D.R. Chappell, J.P.G. Mailer and D.M. Brookbanks ABSTRAC T High efficiency indium phosphide oscillators have been developed for pulsed applications in the 12 to 18 GHz frequency range. The development of low thermal resistance structures has enabled long pulse or high duty factor operation to be readily achieved. Individ

SHF-KLYSTRON DEVELOPMENT FOR SATELLITE AND GROUND STATION APPLICATIONS H.Bohlen; E.Demmel ABSTRACT Development work aimed at klystron design concepts for various satellite and ground station applications in the frequency range 10-15 GHz and output power levels between 500 and 2500 W is described by this paper. Low weight and high efficiency are attractive features for space borne application usi