"THE FIELD FOCUSING FILTER" A NOVEL FORM OF MICROWAVE BAND BRANCHING FILTER D.E.N. Davies and A.Y. Niazi * ABSTRACT The paper describes a new form of microwave branching filter which may be realised in either waveguide or a microstrip form. The filter incorporates a semicircular non resonant cavity in which the various output frequency bands are focused to emerge at different output port

REDUCED COUPLING APERTURE OF MICROSTRIP STUBS PROVIDES NEW ASPECTS IN STUB FILTER DESIGN G. Kompa Abstract: Generally microstrip stubs are coupled galvanically over the whole cross-section of the adjoining main lines. Reducing the coupling aperture two effects can be observed being superimposed: Smaller coupling apertures lead to higher skirt selectivity, increase, however, the excitation of high

HIGH POWER LOW NOISE Pt-SCHOTTKY BARITT DIODES J. Freyer, S. Ahmad and W. Harth Abstract: The fabrication of Pt-Schottky Baritt diodes is described. Output power as high as 152 mW at 8.6 GHz has been obtained with an efficiency of 2.3 %. The highest efficiency of the diodes is 3 %. The signal to noise ratio is 150 dB and 100 dB for AM and FM noise, respectively. Minimum noise measure of 17 dB

SMALL DAYEM BRIDGES AS ACTIVE COMPONENTS IN MICROWAVECIRCUITS P. E. Lindelof, M.T. Levinsen, T. D. Clark* N.F. Pedersen, 0 .H. S9Srensen and J. Mygindt M. Danielsen + ABSTRACT We report X-band microwave measurements on superconducting thin film microbridges (Dayem bridges), mounted in a half wavelength cavity with an adjustable coupling to match the bridge properly. Power emission from the brid

HIGHLY RELIABLE CW AND PULSED GaAs READ DIODES S. I. Long, J. Kinoshita, F. B. Fank R. D. Fairman, R. J. Hamilton, Jr., I. Ku, and ABSTRACT The development of GaAs Read Impatt diodes has resulted in the availability of reliable, long life, highly efficient CW and pulsed medium power devices. The use of a hi-lo Read structure with a grown GaAs p-n junction provides for the long life and highly

SOME GaAs NOVEL CHARACTERISATION TECHNIQUES USED IN THE DESIGN OF X-BAND FET AMPLIFIERS R. A. Soares and S. C. Cripps~~ ABSTRACT Some improved techniques are described for characterising FETs at X-band frequencies. Device s-parameters are measured on an Automatic Network Analyser using co-axial calibration standards, and much better agreement has been obtained between theoretical and exp

MINIMUM RESISTANCE MICROWAVE DIODES J. S. Barrera, R. C. Curby, D. C. DeFevere, F. S. Kwan, L. J. Nevin and R. Solomon ABSTRACT. Silicon PIN switching diodes and GaAs varactor tuning diodes have demonstrated 100% performance improvements in quality factor Q by using straightforward optimization techniques, device processing innovations and improvements in materials. Analogous design techni

PERFORMANCE OF SOME GaAs MESFET MIXERS Peter HARROP, Rene DESSERT and Pierre BAUDET* ABSTRACT The performance of MESFET mixers used as down-converters from frequencies around 8 GHz to an intermediate frequency of 1 GHz is presented. Several possible mixer configurations have been considered and preliminary results are described involving the use of the MESFET in single as well as double d

NON LINEAR ANALYSIS OF THREE TERMINAL AVALANCHE DEVICES M. LEFEBVRE, G. SALMER, Y. CROSNIER, E. CONSTANT. ABSTRACT The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameter

PIN DIODE AND CIRCUIT PHASE SHIFTERS PERFORMANCE FOR 15,000 HIGH POWER L-BAND J. F. White: C. Genzabella~ D. Fryklund*and R. Ziller * ABSTRACT A packageless PIN diode for an L-band phase shifter was designed with 1000 volt minimum measured breakdown at 10 microamperes (and estimated bulk breakdown of 1800 volts), 3 pf capacitance and 0.2 ohms. The calculated diode RF voltage stress is up to