STABILIZED 12 GHZ MIC OSCILLATORS USING GaAs FET'S D. S. James, * G. R. Painchaud * and E. Minkus.; * W. J. R. Hoefer + ABSTRACT This paper describes low power oscillators principally intended for use in MIC mixer applications. The circuits are fabricated with Plessey GAT 3 and NEC (Nippon) V244 FET's suitably packaged for use with microstrip substrates. The oscillators have been stabiliz

THE DESIGN ANDEVALUATIONOF GaAs POWERMESFETs John A. Angus, Richard James A. Turner ABSTRACT S. Butlin, Donald Parker, Robert H. Bennett and Two power MESFET device structures capable of providing in excess of 1 Watt RF output power in S-band have been fabricated using established small signal MESFET technology. Power added efficiencies of 30%, gains > 8 dB and 1 dB compression powers grea

FRINGING FIELD EFFECTS IN EDGE-GUIDED WAVE CIRCUITS G. Cortucci (*) ,P. de Santis (+) ABSTRACT extended ground The Getzinger's to wide plane. ferrite In particular model [1] for dielectric microstrips magnetized to the it is applied microstrip lines is perpendicularly case of edge to the guided wave[2] propagation. For the first time a quantitative evaluation of the fringing field e

PROPERTIES AND APPLICATIONS OF ASYMMETRIC COUPLED LINE STRUCTURES IN AN INHOMOGENEOUS MEDIUM Vijai K. Tripathi ABSTRACT: The properties and applications of asymmetric uniformly coupled line structures in an inhomogeneous medium (e.g., microstrip, suspended substrate and broad side-coupled strips in a layered medium) are presented in terms of the self and mutual line constants characterizing the c

FUNDAMENTAL AND HIGHER ORDER MODES IN MICROSLOT LINES , J. CITERNE, S. TOUTAIN and L. RACZY * Abstract: "Sandwich" slot-line and original slot-line are investigated by an approximate waveguide treatment. The analytic solutions obtained yield the dispersion diagram of fundamental and higher order modes on these structures. Knowledge of the modes functions permits to derive, like-T.E.M. impeda

EQUA~IONS FOR MICROSTRIP CIRCUIT DESIGN Erik O. Hammerstad ABSTRACT A method for determining the accuracy of computed impedance and wavelength data for microstrip is proposed. It is shown that the standard equations of Wheeler and Schneider have rather large errors. Revised equations for microstrip impedance and wavelength are given both for analysis and synthesis with accuracy better than 1



THE OPTIMUM AREA FOR MILLIMETRE-WAVE IMPATT DIODES I S Groves and P W Huish ABSTRACT. By considering the loss of a practical millimetrewave oscillator circuit, the variation of oscillator power with diode area for a constant junction temperature rise is examined, the results being scaled from measurements on a known device. It is concluded that the diode area for optimum oscillator power is

PHYSICAL MECHANISMS IN HIGH EFFICIENCY GALLIUM ARSENIDE AVALANCHE DIODES P.A. Blakey*, B. Culshaw* and R.A. Giblin* ABSTRACT: Anomalously high efficiencies have been observed in GaAs avalanche diode structures - approaching twice that predicted for the ideal Read diode. The physical mechanisms which contribute to this observed efficiency enhancement, namely depletion layer width modulation an

THE EFFECT OF TRANSFERRED-ELECTRON GaAs IMPATT DIODES ~ , VELOCITY MODULATION IN HIGH-EFFICIENCY by J. PRIBETICH E. CONSTANT, ~ A. FARRAYRE ~~ and M. LEFEBVRE ~ ABSTRACT: The transferred-electron effect on high efficiency IMPATT avalanche diodes characterized by non punch-through structures is investigated. It is shown that the high (greater that 30%) output efficiencies, experimentally