MIC RADIATING ELEMENTS AND ARRAYS Michel de VECCHIS ABSTRACT This paper describes radiating elements using microelectronic integrated circuits (MIC) techniques. A method of investigation has been deve10pped,. using liquid crystals which permits to study matching and radiating parameters of tested elements. Performances ments (i.e. either size. of these elements horn), taking into are compared



SPIRAL SCANNINGS IN LONGWAVE HOLOGRAPHY Jacob Politch* Abstract In longwave holography, the detection of the incident object wavefronts in the recording plane is accomplished by means of an array of detectors, or by a single scanning detector. It is shown that the retrived image is a function also of the Fourier transform of the spatial location of the detecting elements in the recording p

PROBLEMS CONCERNING HOLOGRAPHIC IMAGING AT MICROWAVE FREQUENCIES K. Magura * ABSTRACT This paper shows the results of holographic imaging experiments at the 35 GHz band. The hologram was reduced by an inserted lens and the images were reconstructed by computer. The effects of changes in both, the hologram-structure, i. e. hologramsize and sampling, and in the measured amplitude and phase val

COMPREHENSIVE MEASUREMENT OF APERTURE FIELDS, NEAR-FIELDS AND FAR-FIELDS OF A LARGE REFLECTOR ANTENNA FROM A MICROWAVEHOLOGRAM. J.C. BENNETT,A.P. ANDERSON, .A. McINNES, A.J.T. P WHITAKER ABSTRACT holographic technique is used to obtain quantitative data on the amplitude and phase of the principal and cross-polarised fields in the aperture of a large reflector antenna. The hologram formati

CIRCUIT LOSS CHARACTERISATION WITH AN IMPATT DIODE R.C. Tozer*, R. Charlton + and G.S. Hobson* ABSTRACT A convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator. The diode is biased just below its breakdown voltage and is used as a resonant reflection absorber. From these frequency depend

A Ka BAND AVALANCHE DIODE UP-CONVERTER by J.L. VATERKOWSKI, E. CONSTANT, Y. DRUELLE ABSTRACT: Recent experimental and theoretical results on a silicon avalanche diode up-converter are reported. A simplified theoretical analysis is developed in order to design the semiconductor device. Based upon the somewhat ideaLized Read model, this theory explains the main parametric effect used for fr