A COMPARISON BETWEEN 20:1 X-BAND GaAs IMPATT DIODES P W Huish* AND 5:1 OOPING RATIOS FOR HIGH EFFICIENCY ABSTRACT High efficiency X-band GaAs IMPATT diodes with doping ratios of 20:1 and 5:1 are compared using hybrid coaxial-waveguide circuits. Both doping ratios yield diodes which show a factor of two increase in output power and efficiency when compared with similar uniformly doped diodes. A

KA-BAND SOLID STATE POWERCOMBINING AMPLIFIER Franklin J. Bayuk and Jorg E. Raue ABSTRACT Solid in the multiwatt range have Both GaAs lo-hi-lo profile diodes, and Si double drift diodes are utilized in an amplifier which has an output power in excess of 5 watts at 37 GHz. The total amplifier gain is 33 dB and the 1 dB bandwidth exceeds 700 MHz. The amplifier features 5 stages, 3 of which operate i

FIRST ACHIEVED HAVING 30 % P-N JUNCTION MTTF OF 1011 HOURS H. Sawano, T. Ishii, GaAs Hi-La IMPATT DIODES K. Nishitani, S. Mitsui and K. Shirahata ABSTRACT By improving the carrier profile of a P-N junction GaAs IMPATT diode with a Hi-Lo structure, an efficiency of 30 %, which is comparable to that of an excellent pt Schottky barrier type, has been first achieved. The diode showing the exce

ViARITIME AND AERONAUTICAL SATELLITE NAVIGATION SYSTENS J. Litton Abstract This paper includes a brief survey of the generic types of radio tion aids, including satellite navigation; then a more detailed the TRANSIT and NAVSTAR systems, thus encompassing the principal mental and operational satellite navigation systems. navigareview of develop- The precision and accuracy of these systems, thei

THE ELLIPTIC MICROSTRIP RING RESONATOR J.G. Kretzschmar* ABSTRACT The characteristic equation for the resonant modes in a confocal elliptic microstrip ring resonator is derived. Numerical results for the dominant mode are given as a function of the dimensions of the confocal elliptical boundaries. 

DESIGN , MEASUREMENTAND APPLICATION OF LUMPED ELEMENTS UP TO J-BAND R.S. Pengelly* and D.C. Rickard* ABSTRACT Lumped-element design, fabrication and characterization has been extended for MIC requirements up to l8GHz. Spiral or loop inductors and overlay or interdigital capacitors have been measured at appropriate frequencies leading to satisfactory equivalent circuits. Variations in parasiti

EQUIVALENT INDUCTANCE AND CAPACITANCE OF A MICROSTRIP SLOT Juan R. MOSIG and Professor F.E. GARDIOL ABSTRACT: Slots cut in the upper conductor of a microstrip transmission line have been used to match microwave components such as couplers and filters. Their equivalent circuit, which must be known in order to design devices involving such discontinuities, is composed of a series inductance

COPLANAR LINES APPLICATION M. HaDARI' : TO LUMPED AND SEMI-LUMPED MICROWAVE INTEGRATED CIRCUITS * , C. AURY,A. JEAN-FREDERIC ABSTRACI' After having evinced the advantages which nay be derived from the use of lumped elements in a coplanar configuration, lumped or semi-lumped coplanar microwave filters with infinite attenuation peaks are described. For this purpose, the behaviour of lumped indu

SOME RECENT ADVANCEMENTS IN HYBRID MICs P.M. Brigginshaw, N.M. Lancaster, G.R. Swallow and T.R. Oxley ABSTRACT This paper describes some circuit design features of MIC sub-systems utilising hybrid-open microstrip techniques which give improved performance, particularly where military environments necessitate a wide operating temperature range and compactness is of prime importance. The

ANALYSIS WITH Arne MORE AND SYNTHESIS OF COUPLED STRIPS. MICROSTRIP CIRCUITS THAN TWO COUPLED B. Dalby ABSTRACT. It is shown that the y-parameters for the 2N-port network, N coupled strips form, may be found using almost arbitrary quasi-propagation modes if the relative bandwith of interest is small. Chosing a special set of propagation modes leads to simple expressions for the y-paramete