HIGHLY RELIABLE CW AND PULSED GaAs READ DIODES S. I. Long, J. Kinoshita, F. B. Fank R. D. Fairman, R. J. Hamilton, Jr., I. Ku, and ABSTRACT The development of GaAs Read Impatt diodes has resulted in the availability of reliable, long life, highly efficient CW and pulsed medium power devices. The use of a hi-lo Read structure with a grown GaAs p-n junction provides for the long life and highly

SOME GaAs NOVEL CHARACTERISATION TECHNIQUES USED IN THE DESIGN OF X-BAND FET AMPLIFIERS R. A. Soares and S. C. Cripps~~ ABSTRACT Some improved techniques are described for characterising FETs at X-band frequencies. Device s-parameters are measured on an Automatic Network Analyser using co-axial calibration standards, and much better agreement has been obtained between theoretical and exp

MINIMUM RESISTANCE MICROWAVE DIODES J. S. Barrera, R. C. Curby, D. C. DeFevere, F. S. Kwan, L. J. Nevin and R. Solomon ABSTRACT. Silicon PIN switching diodes and GaAs varactor tuning diodes have demonstrated 100% performance improvements in quality factor Q by using straightforward optimization techniques, device processing innovations and improvements in materials. Analogous design techni

PERFORMANCE OF SOME GaAs MESFET MIXERS Peter HARROP, Rene DESSERT and Pierre BAUDET* ABSTRACT The performance of MESFET mixers used as down-converters from frequencies around 8 GHz to an intermediate frequency of 1 GHz is presented. Several possible mixer configurations have been considered and preliminary results are described involving the use of the MESFET in single as well as double d

NON LINEAR ANALYSIS OF THREE TERMINAL AVALANCHE DEVICES M. LEFEBVRE, G. SALMER, Y. CROSNIER, E. CONSTANT. ABSTRACT The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameter

PIN DIODE AND CIRCUIT PHASE SHIFTERS PERFORMANCE FOR 15,000 HIGH POWER L-BAND J. F. White: C. Genzabella~ D. Fryklund*and R. Ziller * ABSTRACT A packageless PIN diode for an L-band phase shifter was designed with 1000 volt minimum measured breakdown at 10 microamperes (and estimated bulk breakdown of 1800 volts), 3 pf capacitance and 0.2 ohms. The calculated diode RF voltage stress is up to

RADIO LINKS Horst 7 W MICROWAVETRANSISTOR AMPLIFIER FOR HIGH CAPACITY 4 GHZ Bernhard and Gerd OrtkraE ABSTRACT This paper describes the basic aspects for the design of wideband microwave transistor power amplifiers making use of advanced transistor technology. A novel measuring procedure for the accurate determination of the large signal impedances of microwave transistors is presented. For the

A NEW'PACKAGE FOR NEGATIVE RESISTANCE MICROWAVEDIODES T. Ishii, A. Kondoh, K. Shirahata A new microwave diode package containing additional inductance and capacitance besides case capacitance and lead inductance has been considered. Admittance and small signal characteristics of a silicon IMPATT diode cased in a new package are discussed. Using one of this sort of diodes, small signal power ga

NONLINEAR EFFECTS IN IMPATf DIODE AMPLIFIERS T. Berce li ABSTrACT. The nonlinear effects in Impatt diode amplifiers have been investigated bath theoretically and experimentally. Output power, group delay and AM-to-PM conversion characteristics show an increased unsymmetry with enhanced input level. The FM distortion is higher at band center than at the resonant frequency. Below the band center,

LARGE SIGNAL (a) BEHAVIOUR OF CATHODE NOTCH STABILIZED T.E. AMPLIFIER DEVICES Peter HARROP, John MAGARSHACK, Alain RABIER and Roberto SPITLANIK* ABSTRACT: An account of a computer model is presented which is designed to simulate the large signal behaviour of GaAs transferred electron amplifier diodes. Devices have been fabricated with a variety of doping profiles following the indica