SICARID.TCl RAILWAY A lEV NICROWAVE SYSTEN FOR THE TRANSFER OF IIFORNATIORS FROM THE TRACK TO THE VAGON II NETWORKS F. Becker and W. Meneolia ABSTRACT The transfer of information in all systems for automatic Systems with intermittent from the railway train ctntrol. network to passing locomotivesis a very important factor transfer of information from points to the locomotives offer in additio

DETECTION OF OBSTACLES ON RAILWAY LEVEL-CROSSINGS Bernard Thourel ABSTRACT The detection of obstacles on railway level-crossings is usually ensured by small radars utilizing gunn diodes or similar devices. This process is not quite safe however and it may happen that a vehicle at standstill on the railway track cannot be detected. We are studying surface wave propagation, guided by the rails usi

APPLICATION OF MICROWAVES OF RAILROAD Eikichi TO THE SAFETY CROSSINGS SYSTEM Yamashita ABSTRACT A new system to prevent collision accidents between cars and trains on railroad crossings is described in which microwave radiation from Gunn-diode oscillators are used to recognize obstacles. Experimental results are reported. 

PERFORMANCE OF THE MADGE AIRCRAFT GUIDANCE SYSTEM R.N. Alcock, * P. England, + R.P. V~ncent . * ABSTRACT MADGE (Microwave Aircraft Digital Guidance Equipment) is a portable equipment which assists the landing of all types of aircraft at a variety of sites. It contains a digital data link operating at 5 GHz. Distance is derived in the air by measuring go-and-return time; angles are mea

A COOLED GaAs MESFET AMPLIFIER OPERATING AT 12 GHz WITH 1.6 dB NOISE FIGURE C. A. Liechti, R. B. Larrick and D. J. Mellor ABSTRACT The performance of a three-stage GaAs MESFET amplifier 11.7 to 12.2 GHz U.S. satellite communication band is 40ºK and 300ºK. At room temperature, the noise and the gain is 18 dB. By cooling to 40ºK, the noise 1.6 dB (Te=130ºK) while the gain increases to 31 opera

BROADBAND LUMPED ELEMENT X-BAND GaAS FET AMPLIFIERS R. S. Pengelly ABSTRACT * The GaAs FET is increasing in use as a high frequency, low noise amplifier. This paper presents work directed to extending the bandwidth and repeatability of X-band FET amplifiers by the use of lumped element techniques. Such lumped element microwave circuits offer a considerable size saving when compared to microstri

STABILIZED 12 GHZ MIC OSCILLATORS USING GaAs FET'S D. S. James, * G. R. Painchaud * and E. Minkus.; * W. J. R. Hoefer + ABSTRACT This paper describes low power oscillators principally intended for use in MIC mixer applications. The circuits are fabricated with Plessey GAT 3 and NEC (Nippon) V244 FET's suitably packaged for use with microstrip substrates. The oscillators have been stabiliz

THE DESIGN ANDEVALUATIONOF GaAs POWERMESFETs John A. Angus, Richard James A. Turner ABSTRACT S. Butlin, Donald Parker, Robert H. Bennett and Two power MESFET device structures capable of providing in excess of 1 Watt RF output power in S-band have been fabricated using established small signal MESFET technology. Power added efficiencies of 30%, gains > 8 dB and 1 dB compression powers grea

FRINGING FIELD EFFECTS IN EDGE-GUIDED WAVE CIRCUITS G. Cortucci (*) ,P. de Santis (+) ABSTRACT extended ground The Getzinger's to wide plane. ferrite In particular model [1] for dielectric microstrips magnetized to the it is applied microstrip lines is perpendicularly case of edge to the guided wave[2] propagation. For the first time a quantitative evaluation of the fringing field e

PROPERTIES AND APPLICATIONS OF ASYMMETRIC COUPLED LINE STRUCTURES IN AN INHOMOGENEOUS MEDIUM Vijai K. Tripathi ABSTRACT: The properties and applications of asymmetric uniformly coupled line structures in an inhomogeneous medium (e.g., microstrip, suspended substrate and broad side-coupled strips in a layered medium) are presented in terms of the self and mutual line constants characterizing the c