HARITT IMPEDANCE FROM DC MEASUREMEN'l'S ON WAFERS A. Chiabrera~, G. Soncini+, M. Tomassinix ABSTRACT The small-signal impedance of diffused junction BARITTs is obtained by an analytical expression, which depends on the dc differential resistance measured at each bias current directly on the silicon wafer. The impedances computed according to the above procedure are in agreement with published

ABOVE X-BAND PERFORMANCE OF BARI'IT DIODES ArmstrQng, B.M., Christie, Wakefield, J. J., Gamble,.H.S., Stewart, J.A.C. and Abstract The predicted small signal noise measure and impedance of . pnp Baritt diodes is described for three values of n region doping density, Nd, at frequencies up to 20GHz. It is shown that for suitable values of Nd, small signal noise measures of order l0dB or less ca

Punch Through Injection Structures for low voltage oscillation and low noise D. amplification DELAGEBEAUDEUF ABSTRACT: Two punch through injection structures are proposed, the first one for low voltage oscillation, the second one for low noise amplification to achieve the first objective N+ P N+ structures have been realized which gave interesting results.. The second objective p+ has b

A NEW CONCEPT FOR MICROSTRIP-INTEGRATED GaAs SCHOTTKY-DIODES A. WORTMANN ABSTRACT: A new concept for integrated planar Schottky-diodes has been developed. It meets the two important requirements in the design of microwave diodes: high cutoff frequency and low parasitics. Only one epitaxial layer is needed. The Schottky contact is deposited on the slope of a mesa in order to obtain both low ser

DESIGN, PERFORMANCE, AND BEHAVIOR OF PULSED AND CW SILICON DOUBLE-DRIFT IMPATTS CRAIG P. SNAPP, GEORGE PFUND, AND ALLEN F. PODELL ABSTRACT Double-drift silicon IMPATTs for high power pulsed and CWapplications have been optimized by the proper design of the width and impurity concentration in both the Nand P-layers. Peak pulse powers greater than 18 watts at a 25% duty cycle were obtained at 10







BARBI A NEW MICROWAVE PRECOLLISION AUTOMOBILES - SENSOR FOR AIRBAG ACTIVATION IN Gerald F. Ross This paper describes a novel and low-cost scheme for automotive precollision sensing called BARBI, an acronym for BAseband Radar Bag Initiator. The proposed technique involves the transmission and reception of a subnanosecond baseband or video impulse-like signal (i.e., no rf carrier) and requires

THE RroENERATIVE DIGITAL TRANSDUCER (RDT): A NmY ACTIVE MICROWAVEFIELD SENSOR FOR INDUSTRIAL MEASUREMENTSAND CONTROL R. G. Bosisio, ABSTRACT L. Nappert and H. Hua Quoc A regenerative digital transducer (RDT) with an active linear response is described. The RDT can be operated in a contact or non-contact mode for moisture measurements in dielectric webs and in liquids or oils flowing inside di