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20°K - COOLABLE PIN DIODE SWITCH WITH VERY LOW LOSS IN L-BAND
J. Edrich, R. Turner
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1973
NOVEL FORMS OF MICROWAVE LIMITER
C.D. Hannaford, J.R. Duncan
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1973
CHIP DIODE PHASE SHIFTERS FOR 5.1 AND 15.5 GHz
J.F. White
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1973
CHARACTERIZATION OF REFLECTION PHASE MODULATORS USING HYPERBOLIC GEOMETRY
T.A. Dorschner
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1973
A HIGH POWER GAAS SCHOTTKY BARRIER IMPATT DIODE IN 30GHZ BAND
M. Migitaka, M. Nakamura, K. Saito, K. Sekine
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1973
INFLUENCE OF TRANSVERSE INSTABILITY ON THE EFFICIENCY OF IMPATT DIODES
B.B. van Iperen
INFLUENCE OF TRANSVERSE EFFICIENCY INSTABILITY DIODES ON THE OF IMPATT B.B. van Iperen Philips Research Laboratories Eindhoven-The Netherlands ----------- Abstract. Measuring results of large-signal impedance, ac voltage and Io-Vo characteristics (Vo and Io dc voltage and current resp) on X-band Si Impatt diodes in pulse operation show that the efficiency is limited by saturation of the a
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1973
CHARACTERISTIC PARAMETERS OF TRAPATT DIODES
I.W. Mackintosh, R.J. Royds
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1973
SILICON IMPATT DIODES FOR OPERATION AT GREATER THAN 50 GHz
F.J. Hilsden, C.M. Butler
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1973
SILICON AVALANCHE DIODE WITH AN EPITAXIAL DOUBLE DRIFT STRUCTURE FOR MILLIMETRIC APPLICATIONS
J.V. Bouvet
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1973
RECENT ADVANCES IN THE BURNOUT PROPERTIES OF LOW NOISE GALLIUM ARSENIDE SCHOTTKY BARRIER MIXER DIODES
G.H. Swallow, T.H. Oxley, A.M. Hansom
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1973
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