A 13/2:1 BROADBAND MICROWAVE FIELD-EFFECT TRANSISTOR AMPLIFIERS* Dr. Walter H. Ku School of Electrical Engineering Cornell University Ithaca, New York 14850 Dr. Paul L. Clouser IBM Federal Systems Division Electronics Systems Center OWego, New York 13827 ABSTRACT With the recent advent of transistors which are capable of operating in the microwave frequencies, both bipolar and field-effect transi