EuMC: Characterization and Electrical Modeling Including Trapping Effects of AlN/GaN HEMT 4x50(mu)m on Silicon Substrate
Mohamed Bouslama, Ahmad Al Hajjar, Raphael Sommet, Farid Medjdoub, Jean-Christophe Nallatamby
Proceedings of the 48th European Microwave Conference
Characterization and Electrical Modeling including
Trapping Effects of AlN/GaN HEMT 4x50?m on
silicon substrate
Mohamed Bouslama#1, Ahmad Al Hajjar #2, Raphael Sommet #3, Farid Medjdoub *4, Jean-Christophe Nallatamby #5
# Univ.limoges, CNRS, Xlim, UMR 7252, F-19100, Brive
IEMN-CNRS, Avenue Henry Poincaré, 59652 Villeneuve d?Ascq
1
mohamed.bous